Method for fabricating (LED) dice using laser lift-off from a substrate to a receiving plate

A method for fabricating light emitting diode (LED) dice comprising:

• providing a plurality of die sized semiconductor structures on a substrate, each semiconductor structure comprising an epitaxial stack having comprising a p-type confinement layer having a surface, an n-type confinement layer, an active layer between the p-type confinement layer and the n-type confinement layer configured to emit light, a P-metal layer making contact to the p-type confinement layer configured as a P-electrode, a mirror layer on the n-type confinement layer, an isolation layer on the n-type confinement layer and an exposed portion of the p-type confinement layer, and an N-electrode making contact to the n-type confinement layer;
• a sacrificial layer on the surface of the p-type confinement layer at an interface with the substrate;
• providing a receiving plate having an elastomeric polymer layer;
• placing the substrate and the receiving plate in proximity to one another with a gap therebetween;
• and
• performing a laser lift-off (LLO) process by directing a uniform laser beam through the substrate to the sacrificial layer at the interface of the semiconductor structures with the substrate to lift off the semiconductor structures from the substrate and through the gap onto the elastomeric polymer layer and with the sacrificial layer ablated during the laser lift-off (LLO) process.