Multi-wavelength pyrometer for chamber monitoring
AssigneeApplied Materials, Inc.
InventorsZhepeng Cong, Tao Sheng, Ashur J. Atanos, Nimrod Smith, Vinh N. Tran, Khokan C. Paul
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Abstract
The present disclosure relates to methods, systems, and apparatus for monitoring temperature at multiple sites within a substrate processing chamber. A system for processing substrates includes: a process chamber comprising a processing volume, a first window at a first perimeter of the processing volume, a substrate support within the processing volume; and a first multi-wavelength pyrometer configured to measure: a first temperature at a first site proximal the first window, and a second temperature at a second site proximal the substrate support.
Claims20
A system for processing substrates, comprising:
- a process chamber comprising a processing volume;
- a first window at a first perimeter of the processing volume;
- a substrate support within the processing volume;
- a first multi-wavelength pyrometer configured to measure:
- a first temperature at a first site proximal the first window;
- and
- a second temperature at a second site proximal the substrate support;
- and
- a second multi-wavelength pyrometer, wherein the second multi-wavelength pyrometer is configured to measure:
- a third temperature at a third site proximal the first window;
- and
- a fourth temperature at a fourth site proximal the substrate support, wherein:
- the first site is different from the third site, and
- the second site is different from the fourth site.
A method of monitoring a process chamber, comprising:
- measuring a first temperature at a first site within the process chamber with a first multi-wavelength pyrometer, wherein the first site is proximal a first window at a first perimeter of a processing volume of the process chamber;
- contemporaneously with the measuring the first temperature, measuring a second temperature at a second site within the process chamber with the first multi-wavelength pyrometer, wherein the second site is proximal a substrate support within the processing volume;
- after the measuring the first temperature, measuring a third temperature at the first site with the first multi-wavelength pyrometer;
- contemporaneously with the measuring the third temperature, measuring a fourth temperature at the second site with the first multi-wavelength pyrometer;
- assessing an operational state of the process chamber based on the first temperature, the second temperature, the third temperature, and the fourth temperature;
- and
- based on the assessing the operational state, performing at least one of the following actions:
- causing a change in an environment of the process chamber;
- and
- generating an alert.
A system for processing substrates, comprising:
- a process chamber comprising a processing volume;
- a first window at a first perimeter of the processing volume;
- a second window at a second perimeter of the processing volume;
- a substrate support within the processing volume;
- a first multi-wavelength pyrometer configured to measure:
- a first temperature at a first site proximal the first window;
- and
- a second temperature at a second site proximal the substrate support;
- a second multi-wavelength pyrometer configured to measure:
- a third temperature at a third site proximal the first window;
- and
- a fourth temperature at a fourth site proximal the substrate support;
- a third multi-wavelength pyrometer configured to measure:
- a fifth temperature at a fifth site proximal the second window;
- and
- a sixth temperature at a sixth site proximal the substrate support;
- wherein:
- the first window comprises quartz,
- the second window comprises quartz,
- the substrate support comprises silicon,
- the first site, the third site, and the fifth site are different from one another, and
- the second site, the fourth site, and the sixth site are different from one another.
A system for processing substrates, comprising:
- a process chamber comprising a processing volume;
- a first window at a first perimeter of the processing volume;
- a substrate support within the processing volume;
- and
- a first multi-wavelength pyrometer configured to measure:
- a first temperature at a first site proximal the first window;
- a second temperature at a second site proximal the substrate support;
- and
- wherein the first multi-wavelength pyrometer is configured to measure the first temperature and the second temperature contemporaneously.
Dependencies are inferred from the claim text.