Method for dry etching using plasma
AssigneeResearch & Business Foundation Sungkyunkwan University
InventorsGeun Young Yeom, Hee Ju Kim, Goong Soo Nam
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Abstract
The disclosure provides a plasma dry etching method. A plasma dry etching method according to an embodiment of the disclosure may include: a first step of placing a substrate having a photoresist pattern formed thereon, which is composed of an exposed portion and a non-exposed portion, on an electrode inside a reaction chamber of a plasma dry etching device; a second step of modifying the surface of the photoresist pattern through a plasma deposition process using a first gas; and a third step of selectively etching the non-exposed portion of the surface-modified photoresist pattern through a plasma dry etching process using a second gas.
Claims22
A plasma dry etching method comprising:
- a first step of placing a substrate having a photoresist pattern formed thereon, which is composed of an exposed portion and a non-exposed portion, on an electrode inside a reaction chamber of a plasma dry etching device;
- a second step of modifying the surface of the photoresist pattern through a plasma deposition process using a first gas;
- and
- a third step of selectively etching the non-exposed portion or exposed portion of the surface-modified photoresist pattern through a plasma dry etching process using a second gas.
A dry etching method using a pulse plasma device comprising a vacuum chamber, an upper electrode positioned inside the vacuum chamber and connected to a high-frequency source power, and a lower electrode positioned spaced apart from the upper electrode and connected to a bias power, the method comprising:
- a first step of positioning a substrate on which a photoresist pattern composed of an exposed portion and a non-exposed portion is formed on the lower electrode;
- a second step of injecting a plasma reaction gas into the vacuum chamber;
- and
- a third step of applying a pulse signal of a first AC voltage and a pulse signal of a second AC or DC voltage synchronized with each other to the upper electrode and the lower electrode, respectively, to form a pulse plasma inside the vacuum chamber to selectively etch a non-exposed portion of the photoresist pattern of the substrate,
- wherein the pulse signal of the first AC voltage has a first application period composed of a first ON time and a first OFF time,
- the pulse signal of the second AC or DC voltage has a second application period composed of a second ON time and a second OFF time, and
- an operation delay time between the first ON time of the pulse signal of the first AC voltage and the second ON time of the pulse signal of the second AC or DC voltage is 0 to 100 seconds.
Dependencies are inferred from the claim text.