Method of processing substrate, method of manufacturing semiconductor device, substrate processing apparatus, and recording medium
AssigneeKokusai Electric Corporation
InventorsMotomu Degai, Kimihiko Nakatani
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Abstract
There is provided a technique that includes: performing a cycle a predetermined number of times, the cycle including: (a) forming a first layer on a surface of a first film by supplying a processing agent to a substrate including the first film on a surface of the substrate; and (b) etching the first layer and at least a portion of the first film by supplying an etching agent to the substrate, wherein in (b), when etching the first layer, a substance X that reacts with the etching agent but does not contribute alone to the etching is generated, and the first layer and the at least a portion of the first film are etched by using a mixture of the substance X and the etching agent.
Claims23
A method of processing a substrate, comprising:
- performing a cycle a predetermined number of times, the cycle including:
- (a) forming a first layer on a surface of a first film by supplying a processing agent to a substrate including the first film on a surface of the substrate;
- and
- (b) etching the first layer and at least a portion of the first film by supplying an etching agent to the substrate,
- wherein the first layer contains H2O as a substance X, and
- wherein in (b), when etching the first layer, the substance X that reacts with the etching agent but does not contribute alone to the etching is generated, and the first layer and the at least a portion of the first film are etched by using a mixture of the substance X and the etching agent.
A substrate processing apparatus, comprising:
- a process chamber in which a substrate is processed;
- a processing agent supply system configured to supply a processing agent to the substrate in the process chamber;
- an etching agent supply system configured to supply an etching agent to the substrate in the process chamber;
- and
- a controller configured to be capable of controlling the processing agent supply system and the etching agent supply system to perform, in the process chamber, a cycle a predetermined number of times, the cycle including:
- (a) forming a first layer on a surface of a first film by supplying the processing agent to the substrate including the first film on a surface of the substrate;
- and (b) etching the first layer and at least a portion of the first film by supplying the etching agent to the substrate, wherein the first layer contains H2O as a substance X, and wherein in (b), when etching the first layer, the substance X that reacts with the etching agent but does not contribute alone to the etching is generated, and the first layer and the at least a portion of the first film are etched by using a mixture of the substance X and the etching agent.
A non-transitory computer-readable recording medium storing a program that causes, by a computer, a substrate processing apparatus to perform a cycle a predetermined number of times, the cycle including:
- (a) forming a first layer on a surface of a first film by supplying a processing agent to a substrate including the first film on a surface of the substrate;
- and
- (b) etching the first layer and at least a portion of the first film by supplying an etching agent to the substrate,
- wherein the first layer contains H2O as a substance X, and
- wherein in (b), when etching the first layer, the substance X that reacts with the etching agent but does not contribute alone to the etching is generated, and the first layer and the at least a portion of the first film are etched by using a mixture of the substance X and the etching agent.
Dependencies are inferred from the claim text.