Semiconductor device and manufacturing method thereof
AssigneeNational Tsing Hua University
InventorsPo-Wen Chiu, Yu-Lun Yang
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Abstract
A manufacturing method of a semiconductor device includes forming a van der Waals structure between a metal and a semiconductor. The method further includes: depositing a protective layer on a two-dimensional semiconductor layer, then patterning the protective layer and the two-dimensional semiconductor layer, forming a first electrode and a second electrode on the protective layer, and removing the protective layer completely, thereby forming a van der Waals contact structure between the first electrode and the semiconductor layer and between the second electrode and the semiconductor layer.
Claims10
A manufacturing method of a semiconductor device, comprising the following steps:
- forming a two-dimensional semiconductor layer on a substrate;
- depositing a protective layer on the two-dimensional semiconductor layer;
- patterning the protective layer and the two-dimensional semiconductor layer;
- forming a first electrode and a second electrode on a portion of the protective layer and the substrate;
- and
- removing the protective layer completely to form a van der Waals contact structure between the first electrode and the two-dimensional semiconductor layer and between the second electrode and the two-dimensional semiconductor layer.
Dependencies are inferred from the claim text.