# US 12,765,281 B2 · Method and system for forming patterned structures using multiple patterning process > Agents: this data is available as JSON from the patentgrep API and MCP server — see https://patentgrep.com/llms.txt - Number: US 12,765,281 B2 - Document ID: US12765281B2 - Status: Granted - Kind: B2 - Application number: 18/236,654 - Filed: 2023-08-22 - Published: 2023-12-07 - Granted: 2026-10-13 - Earliest claimed: 2020-08-27 - Assignees: ASM IP Holding B.V. - Applicants: ASM IP Holding B.V. - Inventors: Shinya Yamada; Kai Matsuhisa; YouJin Choi; Hyunchul Kim; Eunji Bae; SeungRyul Lee; Naoki Inoue; Ryu Nakano; Mao Tsuchiya - Web page: https://patentgrep.com/patent/US12765281B2 ## CPC - H10P 14/6532: {by exposure to a plasma} - C23C 16/04: Coating on selected surface areas, e.g. using masks - C23C 16/50: using electric discharges {(generation and control of plasma in discharge tubes for surface treatment H01J37/32, H01J37/34)} - H01J 37/32165: {Plural frequencies} - H01J 37/3244: {Gas supply means} - H10P 14/6336: {in the presence of a plasma [PECVD]} - H10P 14/6339: {deposition by cyclic CVD, e.g. ALD, ALE or pulsed CVD} - H01J 2237/332: Coating - H10P: GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10 - C23C: COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL (making metal-coated products by extrusion B21C23/22; covering with metal by connecting pre-existing layers to articles, see the relevant places, e.g. B21D39/00, B23K; metallising of glass C03C; metallising mortars, concrete, artificial stone, ceramics or natural stone C04B41/00; enamelling of, or applying a vitreous layer to, metals C23D; treating metal surfaces or coating of metals by electrolysis or electrophoresis C25D; single-crystal film growth C30B; by metallising textiles D06M11/83; decorating textiles by locally metallising D06Q1/04) - H01J: ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS (spark-gaps H01T; electric arc lamps H05B31/00; particle accelerators H05H) ## Abstract Methods of forming patterned structures suitable for a multiple patterning process and manipulating film properties are disclosed. Exemplary methods include forming a layer overlying the substrate, followed by treating the layer, wherein the layer is formed by providing a precursor to the reaction chamber for a precursor pulse period, providing a reactant to the reaction chamber for a reactant pulse period, applying a first plasma power having a first frequency for a first plasma power period, and optionally applying a second plasma power having a second frequency for a second plasma power period, wherein the first frequency is different than the second frequency. Exemplary methods can further include a step of treating the deposited material. ## Claims ### Claim 1 A method of forming patterned structures using a multiple patterning process, the method comprising the steps of: providing a substrate within a reaction chamber, the substrate comprising a surface comprising patterned features; and forming a layer overlying the substrate, wherein the step of forming the layer comprises: depositing a material, wherein the step of depositing the material comprises: providing a precursor to the reaction chamber for a precursor pulse period; providing a reactant to the reaction chamber for a reactant pulse period; and applying a first plasma power, having a first frequency less than 1 MHz for a first plasma power period, and a second plasma power, having a second frequency, for a second plasma power period, wherein the first frequency is different than the second frequency, and wherein the first plasma power period and the second plasma power period overlap; and treating the deposited material, wherein the step of treating the deposited material comprises: providing an oxygen-free gas to the reaction chamber; and applying a third plasma power for a third plasma power period to form activated species from the oxygen-free gas to treat the deposited material to thereby form treated material. ### Claim 2 (depends on 1) The method of claim 1, wherein the reactant comprises oxygen. ### Claim 3 (depends on 1) The method of claim 1, wherein the step of treating the deposited material is repeated one or more times prior to proceeding to a subsequent step. ### Claim 4 (depends on 3) The method of claim 3, wherein a ratio of a number of depositing material steps to a number of treating the deposited material steps is between about 3:1 and about 10:1. ### Claim 5 (depends on 4) The method of claim 4, wherein a cycle of at least one depositing material step and at least one treating the deposited material step is repeated a number of times. ### Claim 6 (depends on 1) The method of any of claim 1, wherein the oxygen-free gas comprises one or more of argon, helium and/or nitrogen. ### Claim 7 (depends on 1) The method of any of claim 1, wherein the patterned features comprise amorphous carbon. ### Claim 8 (depends on 1) The method of any of claim 1, wherein an amount of Si—Si bonds in the treated material is greater than an amount of Si—Si bonds in the deposited material. ### Claim 9 (depends on 1) The method of any of claim 1, wherein an amount of carbon in the treated material is less than an amount of carbon in the deposited material. ### Claim 10 (depends on 1) The method of any of claim 1, wherein a stress of the treated material is less than a stress of the deposited material. ### Claim 11 (depends on 1) The method of any of claim 1, wherein a strength of the treated material is greater than a strength of the deposited material. ### Claim 12 (depends on 1) The method of claim 1, wherein a frequency of the third plasma power is greater than the first frequency. ### Claim 13 (depends on 1) The method of claim 1, wherein the first plasma power is between about 100 W and about 200 W, the second plasma power is between about 200 W and about 300 W, and the third plasma power is between about 30 W and about 80 W. ### Claim 14 (depends on 12) The method of claim 12, wherein a frequency of the third plasma power is between about 13 MHz and about 14 MHz or between about 26 MHz and about 28 MHz. ### Claim 15 (depends on 1) The method of claim 1, wherein, during providing the reactant, a ratio of inert gas to the reactant is greater than or equal to 2. ### Claim 16 (depends on 15) The method of claim 15, wherein the reactant and the inert gas are continuously provided during the depositing the material. ### Claim 17 (depends on 1) The method of claim 1, wherein a pressure within the reaction chamber during the step of depositing material is between about 100 Pa and about 500 Pa or between about 200 Pa and about 400 Pa. ### Claim 18 (depends on 1) The method of claim 1, wherein a temperature of the substrate during the step of depositing material is between about 20° C. and about 100° C. or between about 40° C. and about 80° C. ### Claim 19 (depends on 1) The method claim 1, wherein the first frequency is between about 300 kHz and about 500 KHz. ### Claim 20 (depends on 1) The method of claim 1, wherein the second frequency is between about 13 MHz and about 14 MHz or between about 26 MHz and about 28 MHz. ### Claim 21 (depends on 1) The method of claim 1, wherein an elastic modulus of the treated material is greater than 60 GPa. ### Claim 22 (depends on 1) The method according to claim 1, wherein a stress of the treated material is −150 MPa to about 0 Pa.