# US 12,765,277 B2 · Linear resistive element and preparation method

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- Number: US 12,765,277 B2
- Document ID: US12765277B2
- Status: Granted
- Kind: B2
- Application number: 18/426,367
- Filed: 2024-01-30
- Published: 2024-07-25
- Granted: 2026-10-13
- Earliest claimed: 2021-11-22
- Assignees: Xiamen Industrial Technology Research Institute Co., Ltd.
- Applicants: Xiamen Industrial Technology Research Institute Co., Ltd.
- Inventors: Szu-Chun Kang; Tingying Shen; Lijun Shan; Taiwei Chiu; Yu Liu; Yajun Zhang
- Web page: https://patentgrep.com/patent/US12765277B2

## CPC

- H10N 70/823: {adapted for essentially horizontal current flow, e.g. bridge type devices}
- H10N 70/011: {Manufacture or treatment of multistable switching devices}
- H10N 70/24: {based on migration or redistribution of ionic species, e.g. anions, vacancies}
- H10N: ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR

## Abstract

Disclosed in embodiments of the present application are a linear resistive element and a preparation method therefor. The linear resistive element includes a substrate unit, a function unit and an electrode unit. The substrate unit includes a substrate layer, which is configured to connect the function unit and the electrode unit. The electrode unit includes a first electrode and a second electrode. The first and second electrodes are deposited on the substrate layer, and the function unit is connected between the first and second electrodes. The function unit includes first dielectric layers and resistive layers. The first dielectric layers and the resistive layers are deposited on the substrate layer in an alternately stacked manner. A number of the resistive layers is at least two, and a conductive filament for conductively connecting the first and second electrodes is formed in each of the resistive layers.

## Claims

### Claim 1

A linear resistive element, comprising a substrate unit (1), a function unit (2) and an electrode unit (3); wherein the substrate unit (1) comprises a substrate layer (11); the substrate layer (11) is configured to connect the function unit (2) and the electrode unit (3);
the electrode unit (3) comprises a first electrode (31) and a second electrode (32), the first electrode (31) and the second electrode (32) are deposited on the substrate layer (11), and the function unit (2) is connected between the first electrode (31) and the second electrode (32); and
the function unit (2) comprises first dielectric layers (21) and resistive layers (22), the first dielectric layers (21) and the resistive layers (22) are deposited on the substrate layer (11) in an alternately stacked manner, a number of the resistive layers (22) is at least two, and each of the resistive layers (22) is configured to form a conductive filament (23) for conductively connecting the first electrode (31) and the second electrode (32) upon application of a voltage to the electrode unit (3);
wherein the first electrode (31) and the second electrode (32) are vertically arranged on the substrate layer (11), and the resistive layers (22) and the first dielectric layers (21) are alternately stacked between the first electrode (31) and the second electrode (32) that are arranged vertically.

### Claim 2 (depends on 1)

The linear resistive element of claim 1, wherein
when the resistive layer (22) has a first thickness, a conductive filament (23) having a second thickness is formed in the resistive layer (22), and the conductive filament (23) is an atom-sized conductive filament (23).

### Claim 3 (depends on 1)

The linear resistive element of claim 1, wherein the substrate layer (11) is provided with a via (12), the via (12) is filled with a conductive member (13), and the conductive member (13) is electrically connected with the second electrode (32).

### Claim 4 (depends on 1)

The linear resistive element of claim 1, wherein the function unit (2) is further connected with a second dielectric layer (4), a wire (5) penetrates through the second dielectric layer (4), and the wire (5) is electrically connected with the first electrode (31).

### Claim 5 (depends on 1)

The linear resistive element of claim 1, wherein the first electrode (31) and the second electrode (32) are symmetrically arranged on two sides of the function unit (2).

### Claim 6 (depends on 1)

The linear resistive element of claim 1, wherein a number of the electrode units (3) connected on the substrate layer (11) is plural.

### Claim 7 (depends on 1)

The linear resistive element of claim 1, wherein the resistive layer (22) is made of a resistive material.

### Claim 8 (depends on 4)

The linear resistive element of claim 4, wherein the first dielectric layer (21) is an insulating layer, the insulating layer is made of an insulating material; and the second dielectric layer (4) is a dielectric material layer.

### Claim 9

A method for preparing a linear resistive element, comprising:
providing a via (12) in a substrate layer (11), and filling the via (12) with a conductive member (13);
alternately depositing first dielectric layers (21) and resistive layers (22) on the substrate layer (11) to form a function unit (2), a number of the resistive layers (22) being at least two;
depositing a first electrode (31) and a second electrode (32) on the substrate layer (11), the function unit (2) being connected between the first electrode (31) and the second electrode (32), the second electrode (32) being further connected with the conductive member (13) by means of contact;
depositing a second dielectric layer (4) on the function unit (2), and providing a wire (5) in the second dielectric layer (4), the wire (5) being electrically connected with the first electrode (31); and
applying a voltage to the first electrode (31) and the second electrode (32) through the conductive member (13) and the wire (5) such that a conductive filament (23) connecting the first electrode (31) and the second electrode (32) is formed in each of the resistive layers (22) in the function unit (2);
wherein the first electrode (31) and the second electrode (32) are vertically arranged on the substrate layer (11), and the resistive layers (22) and the first dielectric layers (21) are alternately stacked between the first electrode (31) and the second electrode (32) that are arranged vertically.

### Claim 10 (depends on 1)

The linear resistive element of claim 1, wherein the function unit (2) is formed by alternately stacking a plurality of first dielectric layers (21) and a plurality of resistive layers (22), and a sequence of the stacking includes: the first dielectric layer (21), the resistive layer (22), the first dielectric layer (21), the resistive layer (22), the first dielectric layer (21) which are stacked sequentially.

### Claim 11 (depends on 2)

The linear resistive element of claim 2, wherein the first thickness is preset, and the first thickness of the resistive layer (22) is adjusted to control a size of the conductive filament (23).

### Claim 12 (depends on 6)

The linear resistive element of claim 6, wherein when the number of the electrode units (3) is plural, a number of the function units (2) is the same as the number of the electrode units (3).