Impurity reduction for quantum devices
AssigneeGoogle Inc.
InventorZhimin Jamie Yao
Life of this patent
Estimating the term…
Abstract
One example aspect of the present disclosure is directed to a device including a superconducting tunnel junction. The superconducting tunnel junction includes a first layer. The first layer includes a superconducting material. The superconducting tunnel junction includes a second layer at least partially overlapping the first layer. The second layer includes the superconducting material. The superconducting tunnel junction includes a barrier layer between the first layer and the second layer and a junction area including an overlapping area of the first layer and the second layer. The junction area has a surface area of about 6400 nm2 or less.
Claims17
A method of forming a superconducting tunnel junction, the method comprising:
- forming a first superconducting layer on a substrate;
- forming a barrier layer on the first superconducting layer;
- forming a second superconducting layer on the barrier layer such that the barrier layer is between the first superconducting layer and the second superconducting layer;
- and
- removing one or more nodules from the substrate, wherein the one or more nodules comprise impurities deposited directly on the substrate at one or more locations that are not in physical contact with the first superconducting layer, the barrier layer, or the second superconducting layer, wherein
- the one or more nodules comprise a superconducting material used to form at least one of the first superconducting layer and the second superconducting layer, and wherein the one or more nodules were formed during formation of at least one of the first superconducting layer and the second superconducting layer.
Dependencies are inferred from the claim text.