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US 12,765,270 B2Granted
Magnetoresistive effect element
AssigneeTDK Corporation
InventorsKazuumi Inubushi, Katsuyuki Nakada, Shinto Ichikawa
Life of this patent
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Abstract
The magnetoresistive effect element includes a first ferromagnetic layer, a second ferromagnetic layer, and a nonmagnetic layer positioned between the first ferromagnetic layer and the second ferromagnetic layer, and at least one of the first ferromagnetic layer and the second ferromagnetic layer includes a Heusler alloy layer including a crystal region and an amorphous region.
Claims15
A magnetoresistive effect element, comprising:
- a first ferromagnetic layer;
- a second ferromagnetic layer;
- a nonmagnetic layer positioned between the first ferromagnetic layer and the second ferromagnetic layer;
- and
- a fourth ferromagnetic layer,
- wherein at least one of the first ferromagnetic layer and the second ferromagnetic layer includes a Heusler alloy layer including a crystal region and an amorphous region,
- wherein the fourth ferromagnetic layer is positioned between the Heusler alloy layer and the nonmagnetic layer,
- the fourth ferromagnetic layer includes a Co—Fe—B-A alloy, and
- an A element included in the fourth ferromagnetic layer is any one or more elements selected from the group consisting of Ti, V, Cr, Cu, Zn, Zr, Mo, Ru, Pd, Ta, W, Ir, Pt, and Au.
6 more elements
Dependencies are inferred from the claim text.