Magnetoresistive devices and methods therefor
AssigneeEverspin Technologies, Inc.
InventorsSumio Ikegawa, Jijun Sun, Monika Arora
Life of this patent
Estimating the term…
Abstract
A magnetoresistive stack may include a first electrically conductive material, a fixed region having a fixed magnetic state, a free region configured to have a first magnetic state and a second magnetic state, a dielectric layer disposed between the fixed region and the free region, a spacer region, and a cap layer disposed between the spacer region and the free region. The free region may include a layer of ferromagnetic material, an insertion layer, an iPMA layer, and/or a low saturation magnetization layer.
Claims20
A magnetoresistive stack comprising:
- a fixed region having a fixed magnetic state;
- a free region configured to have a first magnetic state and a second magnetic state, and comprising:
- a first layer of ferromagnetic material;
- a second layer of ferromagnetic material;
- a low saturation magnetization layer disposed above the first layer of ferromagnetic material and the second layer of ferromagnetic material;
- and
- an interfacial perpendicular magnetic anisotropy (iPMA) layer comprising a metal, a metal oxide, or both, wherein the iPMA layer is disposed directly between the first layer of ferromagnetic material and the second layer of ferromagnetic material;
- and
- a dielectric layer disposed between the fixed region and the free region, wherein a magnetic field is provided to the layers of the free region to set a preferred magnetic axis of the free region.
A magnetoresistive stack comprising:
- a fixed region having a fixed magnetic state;
- a free region configured to have a first magnetic state and a second magnetic state, and comprising:
- a first layer of ferromagnetic material;
- a second layer of ferromagnetic material;
- a low saturation magnetization layer disposed above the first layer of ferromagnetic material and the second layer of ferromagnetic material;
- and
- a first interfacial perpendicular magnetic anisotropy (iPMA) layer disposed between the first layer of ferromagnetic material and the second layer of ferromagnetic material;
- and
- a second iPMA layer separate from the first iPMA layer;
- and
- a dielectric layer disposed between the fixed region and the free region.
A magnetoresistive stack comprising:
- a fixed region having a fixed magnetic state;
- a free region configured to have a variable magnetic state, the free region comprising:
- a first layer of ferromagnetic material;
- a second layer of ferromagnetic material;
- a low saturation magnetization layer disposed above the first layer of ferromagnetic material and the second layer of ferromagnetic material;
- and
- an interfacial perpendicular magnetic anisotropy (iPMA) layer disposed between the first layer of ferromagnetic material and the second layer of ferromagnetic material and configured to induce a preferred magnetization axis of the free region;
- and
- a dielectric layer disposed between the fixed region and the free region.
Dependencies are inferred from the claim text.