# US 12,765,264 B2 · Stress-resistant trace structure and piezoelectric detection device made thereof

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- Number: US 12,765,264 B2
- Document ID: US12765264B2
- Status: Granted
- Kind: B2
- Application number: 18/110,017
- Filed: 2023-02-15
- Published: 2024-06-13
- Granted: 2026-10-13
- Earliest claimed: 2022-12-09
- Assignees: Interface Technology (ChengDu) Co., Ltd.; Interface Optoelectronics (Shenzhen) Co., Ltd.; General Interface Solution Limited
- Applicants: Interface Technology (ChengDu) Co., Ltd.; Interface Optoelectronics (ShenZhen) Co., Ltd.; General Interface Solution Limited
- Inventors: Bo-Jhang Sun; Chih-Chin Ko; Hsin-Yu Chen; Ji-An Chen
- Web page: https://patentgrep.com/patent/US12765264B2

## CPC

- H10N 30/88: Mounts; Supports; Enclosures; Casings
- H10N 30/302: {Sensors}
- H10N 30/857: Macromolecular compositions
- H10N 30/875: {Further connection or lead arrangements, e.g. flexible wiring boards, terminal pins}
- G01L 1/16: using properties of piezoelectric devices
- H10N: ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- G01L: MEASURING FORCE, STRESS, TORQUE, WORK, MECHANICAL POWER, MECHANICAL EFFICIENCY, OR FLUID PRESSURE (weighing G01G)

## Abstract

Disclosed is a stress-resistant trace structure and a piezoelectric detection device made thereof. The stress-resistant trace structure includes a patterned trace layer and a porous anti-stress layer. The patterned trace layer has a non-linear pattern and is configured on the porous anti-stress layer. Specifically, the porous anti-stress layer has a plurality of through holes, and the through holes are vertically interlaced with the non-linear pattern.

## Claims

### Claim 1

A stress-resistant trace structure comprising:
a porous anti-stress layer having a plurality of through holes;
a patterned trace layer having a non-linear pattern and being configured on the porous anti-stress layer, wherein the through holes of the porous anti-stress layer are vertically interlaced with the non-linear pattern of the patterned trace layer.

### Claim 2 (depends on 1)

The stress-resistant trace structure of claim 1, wherein the stress-resistant trace structure and another stress-resistant trace structure are respectively disposed on opposite sides of a flexible piezoelectric material layer to form a piezoelectric detection device.

### Claim 3 (depends on 2)

The stress-resistant trace structure of claim 2, wherein the flexible piezoelectric material layer is polyvinylidene fluoride (PVDF), a copolymer of polyvinylidene fluoride or a combination thereof.

### Claim 4 (depends on 1)

The stress-resistant trace structure of claim 1, wherein the patterned trace layer is composed of an electrode that is arranged in the non-linear pattern.

### Claim 5 (depends on 1)

The stress-resistant trace structure of claim 1, wherein the non-linear pattern is a regular or non-regular repeating pattern.

### Claim 6 (depends on 1)

The stress-resistant trace structure of claim 1, wherein the non-linear pattern is adjacent to the through holes.

### Claim 7 (depends on 1)

The stress-resistant trace structure of claim 1, wherein the non-linear pattern surrounds the through holes.

### Claim 8 (depends on 1)

The stress-resistant trace structure of claim 1, wherein the non-linear pattern is conformally configured with the through holes.

### Claim 9 (depends on 2)

A piezoelectric detection device, comprising:
the stress-resistant trace structures as recited in claim 2; and
a plurality of protective layers, each being arranged adjacent to each porous anti-stress layer and away from the flexible piezoelectric material layer;
wherein the flexible piezoelectric material layer is polyvinylidene fluoride (PVDF), a copolymer of polyvinylidene fluoride or a combination thereof.

### Claim 10 (depends on 9)

The piezoelectric detection device of claim 9, wherein the non-linear pattern is composed of a plurality of S-like patterns, the S-like patterns being regularly repeated.

### Claim 11 (depends on 9)

The piezoelectric detection device of claim 9, wherein the non-linear pattern is composed of a plurality of parallelogram patterns, the parallelogram patterns being regularly repeated.