Semiconductor device for video transmission display

A semiconductor device for video transmission display, the semiconductor device comprising:

• a display unit including a plurality of unit display pixels, each of the unit display pixels comprising a light emitting element;
• an image sensor unit including a plurality of unit image sensor pixels, each of the plurality of unit image sensors pixels including a light sensing element, at least portions of unit image sensor pixels of the plurality of unit image sensor pixels and corresponding ones of the plurality of unit display pixels corresponding to a same color overlap each other in a vertical direction;
• and
• a plurality of connection paths, each including at least one through electrode, electrically connecting the plurality of unit image sensor pixels to the plurality of unit display pixels corresponding to the same color.

A semiconductor device for video transmission display, the semiconductor device comprising:

• an image sensor unit including
• a semiconductor substrate,
• a plurality of light sensing elements in the semiconductor substrate and constituting a plurality of unit image sensor pixels,
• a plurality of sensor gate electrodes on a first surface of the semiconductor substrate and constituting a plurality of transistors including a transfer transistor, a reset transistor, a source follower transistor, and a select transistor,
• a first wiring structure on the first surface of the semiconductor substrate, the first wiring structure including a plurality of first wiring patterns and a first inter-wiring insulating layer surrounding the plurality of first wiring patterns and the plurality of sensor gate electrodes,
• a plurality of color filter layers on a second surface of the semiconductor substrate such that each of the plurality of color filter layers at least partially overlap corresponding light sensing elements of the plurality of corresponding light sensing elements, and
• a plurality of microlenses on the plurality of color filter layers;
• a display unit on the first wiring structure opposite to the semiconductor substrate and including
• a second wiring structure including a plurality of second wiring patterns and a second inter-wiring insulating layer surrounding the plurality of second wiring patterns,
• a semiconductor layer between the first wiring structure and the second wiring structure,
• a plurality of light emitting elements on the second wiring structure, the plurality of light emitting elements constituting a plurality of unit display pixels, and
• a display pixel circuit connected to each of the plurality of light emitting elements, the display pixel circuit including a driving transistor and a switching transistor, each of which is a metal oxide semiconductor field effect transistor;
• and
• a plurality of connection paths, each of the plurality of connection paths including at least one through electrode penetrating the first inter-wiring insulating layer and the semiconductor layer, and electrically connecting the plurality of unit image sensor pixels to the plurality of unit display pixels corresponding to a same color, and
• wherein the plurality of unit image sensor pixels and the plurality of unit display pixels corresponding to the same color overlap, at least in part, to each other in a vertical direction.