Quantum dot film layer patterning method, quantum dot light emitting device

Abstract

The present disclosure provides a quantum dot film layer patterning method and a quantum dot light emitting device, and relate to a field of display technology. The quantum dot film layer patterning method includes: forming a quantum dot material layer on a side of a substrate; forming an organic material layer on one side of the quantum dot material layer away from the substrate, wherein the organic material layer has a transmittance of not less than 80% in UV and visible light bands; exposing a preset area of the substrate to cause crosslinking of the material in the preset area of the quantum dot material layer or the generation of salts insoluble in the developer, or/and to cause crosslinking of the material in the preset area of the organic material layer; removing the organic material layer and the quantum dot material layer from a non-preset area of the substrate, to slow down the PLQY decrease of the quantum dot material layer.

Dependencies are inferred from the claim text.