# US 12,765,203 B2 · Light emitting display apparatus with auxiliary metal layers in contact with electrodes of thin film transistor

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- Number: US 12,765,203 B2
- Document ID: US12765203B2
- Status: Granted
- Kind: B2
- Application number: 18/353,807
- Filed: 2023-07-17
- Published: 2024-02-29
- Granted: 2026-10-13
- Earliest claimed: 2022-08-31
- Assignees: LG Display Co., Ltd.
- Applicants: LG Display Co., Ltd.
- Inventors: Mijin Jeong; Sangsoon Noh; Dongchae Shin; Sunyoung Choi; Moonho Park
- Web page: https://patentgrep.com/patent/US12765203B2

## CPC

- H10K 59/1315: {comprising structures specially adapted for lowering the resistance}
- H10K: ORGANIC ELECTRIC SOLID-STATE DEVICES

## Abstract

Disclosed is a light emitting display device, including: a first thin film transistor including a first semiconductor pattern, a first gate electrode, a first source electrode, and a first drain electrode; a second thin film transistor including a second semiconductor pattern, a second gate electrode, a second source electrode, and a second drain electrode; and a light emitting element layer electrically connected to the second thin film transistor, and the second thin film transistor may further include the second source electrode and an auxiliary metal layer contacting a lower portion of the second drain electrode.

## Claims

### Claim 1

A light emitting display device, comprising:
a first thin film transistor, the first thin film transistor comprising a first semiconductor pattern, a first gate electrode, a first source electrode, and a first drain electrode;
a second thin film transistor, the second thin film transistor comprising a second semiconductor pattern, a second gate electrode, a second source electrode, and a second drain electrode; and
a light emitting element layer electrically connected to the second thin film transistor,
wherein the second thin film transistor further comprises a plurality of auxiliary metal layers, wherein the plurality of auxiliary metal layers are in contact with a lower portion of each of the second source electrode and the second drain electrode,
wherein the first source electrode and the first drain electrode are disposed in a same layer as the plurality of auxiliary metal layers, and materials of the first source electrode and the first drain electrode are different from a material of the plurality of auxiliary metal layers, and
wherein materials of the first source electrode and the first drain electrode are same as materials of the second source electrode and the second drain electrode on the plurality of auxiliary metal layers.

### Claim 2 (depends on 1)

The light emitting display device of claim 1,
wherein the plurality of auxiliary metal layers comprise molybdenum.

### Claim 3 (depends on 1)

The light emitting display device of claim 1,
wherein at least one or more insulating layers having a contact hole are interposed among the second semiconductor pattern, the second source electrode and the second drain electrode, and
the plurality of auxiliary metal layers are in the contact hole.

### Claim 4 (depends on 1)

The light emitting display device of claim 1,
wherein the second semiconductor pattern, the second source electrode, and the second drain electrode are electrically connected through plurality of auxiliary metal layers.

### Claim 5 (depends on 1)

The light emitting display device of claim 1,
wherein the first semiconductor pattern is made of low-temperature polysilicon, and the second semiconductor pattern is made of oxide.

### Claim 6 (depends on 1)

The light emitting display device of claim 1,
wherein the first source electrode, the first drain electrode, the second source electrode, and the second drain electrode comprise at least three metal layers.

### Claim 7 (depends on 1)

The light emitting display device of claim 1, further comprising:
a first blocking layer under the first semiconductor pattern and a second blocking layer under the second semiconductor pattern.

### Claim 8 (depends on 7)

The light emitting display device of claim 7,
wherein at least one or more buffer layers are interposed between the first blocking layer and the second blocking layer.

### Claim 9 (depends on 7)

The light emitting display device of claim 7,
wherein a vertical length of the first blocking layer and the first semiconductor pattern is different from a vertical length of the second blocking layer and the second semiconductor pattern.

### Claim 10 (depends on 7)

The light emitting display device of claim 7,
wherein a vertical length of the second blocking layer and the second semiconductor pattern is smaller than a vertical length of the first blocking layer and the first semiconductor pattern.

### Claim 11 (depends on 1)

The light emitting display device of claim 1,
wherein a material of the first semiconductor pattern and a material of the second semiconductor pattern are different from each other.

### Claim 12 (depends on 1)

The light emitting display device of claim 1,
wherein a material of the second source electrode and the second drain electrode is different from a material of the plurality of auxiliary metal layers.

### Claim 13 (depends on 1)

The light emitting display device of claim 1,
wherein a material of the plurality of auxiliary metal layers is different from materials of the second source electrode and the second drain electrode.