# US 12,765,190 B2 · Display device

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- Number: US 12,765,190 B2
- Document ID: US12765190B2
- Status: Granted
- Kind: B2
- Application number: 18/529,058
- Filed: 2023-12-05
- Published: 2024-07-04
- Granted: 2026-10-13
- Earliest claimed: 2022-12-30
- Assignees: LG Display Co., Ltd.
- Applicants: LG Display Co., Ltd.
- Inventors: DeukHo Yeon; KiTae Kim; SunWook Ko
- Web page: https://patentgrep.com/patent/US12765190B2

## CPC

- H10K 59/126: Shielding, e.g. light-blocking means over the TFTs
- H10K 59/1213: {the pixel elements being TFTs}
- H10K 59/122: Pixel-defining structures or layers, e.g. banks
- H10K: ORGANIC ELECTRIC SOLID-STATE DEVICES

## Abstract

A display device includes a substrate including an active area including a plurality of pixels and a non-active area located to surround the active area; a first thin film transistor disposed on the substrate and a second thin film transistor disposed to be spaced apart from the first thin film transistor; a planarization layer covering the first thin film transistor and the second thin film transistor; a first shielding layer disposed on the planarization layer; a light emitting element including an anode disposed on the planarization layer to be spaced apart from the first shielding layer; and a second shielding layer disposed on the anode. Accordingly, reliability of the display device can be improved by increasing a light shielding area in the display device.

## Claims

### Claim 1

A display device comprising:
a substrate including an active area including a plurality of pixels and a non-active area that surrounds the active area;
a first thin film transistor on the substrate and a second thin film transistor that is spaced apart from the first thin film transistor;
a planarization layer covering the first thin film transistor and the second thin film transistor;
a first shielding layer on the planarization layer;
a light emitting element including an anode on the planarization layer and spaced apart from the first shielding layer; and
a second shielding layer on the anode,
wherein a width of an upper portion of the anode is greater than a width of a lower portion of the anode,
wherein the first shielding layer at least partially overlaps with the upper portion of the anode, and is spaced apart from the lower portion of the anode.

### Claim 2 (depends on 1)

The display device of claim 1, wherein the anode has a reverse tapered shape.

### Claim 3 (depends on 2)

The display device of claim 2, wherein the first shielding layer and the second shielding layer comprise a same material.

### Claim 4 (depends on 3)

The display device of claim 3, wherein the first shielding layer and the second shielding layer respectively include any one of silver, gold, copper, molybdenum, nickel, palladium, tellurium, tungsten, and tantalum, or an alloy thereof.

### Claim 5 (depends on 1)

The display device of claim 1, further comprising:
a bank on the planarization layer, the bank covering an end portion of the anode,
wherein the bank covers a portion of the first shielding layer and a portion of the second shielding layer.

### Claim 6 (depends on 5)

The display device of claim 5, wherein the bank comprises a black material.

### Claim 7 (depends on 1)

The display device of claim 1, wherein the first thin film transistor includes a first active layer, a first gate electrode, a first source electrode, and a first drain electrode, and the second thin film transistor includes a second active layer, a second gate electrode, a second source electrode, and a second drain electrode.

### Claim 8 (depends on 7)

The display device of claim 7, further comprising:
at least one insulating layer on the first gate electrode of the first thin film transistor,
wherein the second thin film transistor is on the at least one insulating layer.

### Claim 9

A display device comprising:
a substrate including an active area including a plurality of pixels and a non-active area that surrounds the active area;
a thin film transistor on the substrate;
a planarization layer covering the thin film transistor;
a first shielding layer on the planarization layer;
a light emitting element including an anode on the planarization layer; and
a second shielding layer on an upper portion of the anode,
wherein a width of the upper portion of the anode is greater than a width of a lower portion of the anode, and
wherein the first shielding layer at least partially overlaps with the upper portion of the anode, and is spaced apart from the lower portion of the anode.

### Claim 10 (depends on 9)

The display device of claim 9, wherein, in a plan view of the display device, the first shielding layer overlaps with the second shielding layer in an edge area of the anode.

### Claim 11 (depends on 9)

The display device of claim 9, wherein the first shielding layer and the second shielding layer respectively include any one of silver, gold, copper, molybdenum, nickel, palladium, tellurium, tungsten, and tantalum, or an alloy thereof.

### Claim 12 (depends on 9)

The display device of claim 9, further comprising:
a bank on the planarization layer, the bank covering an end portion of the anode,
wherein the bank covers a portion of the first shielding layer and a portion of the second shielding layer.

### Claim 13 (depends on 12)

The display device of claim 12, wherein the bank comprises a black material.