Display panel

A display panel, comprising:

• a substrate;
• a thin-film transistor layer disposed on the substrate and comprising a first thin-film transistor and a second thin-film transistor, wherein the first thin-film transistor comprises a low-temperature polycrystalline silicon semiconductor layer, and the second thin-film transistor comprises an oxide semiconductor layer;
• at least one first annular retaining wall surrounding the oxide semiconductor layer;
• a first insulating layer disposed on the substrate, wherein the oxide semiconductor layer and the first annular retaining wall are disposed in a same layer on the first insulating layer, and a material of the oxide semiconductor layer and a material of the first annular retaining wall are same;
• a buffer layer disposed on the substrate, wherein the low-temperature polycrystalline silicon semiconductor layer is disposed on the buffer layer;
• at least one second annular retaining wall surrounding the low-temperature polycrystalline silicon semiconductor layer;
• a gate insulating layer disposed on the buffer layer and covering the low-temperature polycrystalline silicon semiconductor layer and the second annular retaining wall;
• and
• a first gate layer disposed on the gate insulating layer and covered by the first insulating layer;
• wherein the first insulating layer is disposed between the first gate layer and the oxide semiconductor layer.