Backboard structure, manufacturing method thereof, and display device

A method for manufacturing a backboard structure, comprising:

• providing an array of substrates;
• patterning a passivation layer deposited on one side of the array substrate with yellow light and etching processes;
• patterning a planarization layer formed on the side of the passivation layer away from the array substrate;
• forming holes through the passivation layer at the auxiliary electrode layer corresponding to the array substrate on the planarization layer, and forming a padding portion on the inner wall of the holes;
• depositing an anode layer on the side of the planarization layer away from the passivation layer, and defining an anode pattern using yellow light, wherein the anode layer corresponds to the pixel electrode area setting;
• forming a pixel definition layer covering the anode layer on the side of the planarization layer away from the passivation layer, wherein an extension section of the pixel definition layer covers the inner wall of the hole to enclose and form an overlapping hole;
• exposing and developing the pixel definition layer to form a drilling structure on the inner wall of the overlapping hole and near the padding portion;
• forming an organic functional layer on the side of the pixel definition layer away from the planarization layer;
• and
• forming a cathode layer on the side of the organic functional layer away from the pixel definition layer, wherein the cathode layer has a continuous overlap section, which is overlapped with the auxiliary electrode layer of the array substrate through the overlapping hole and the drilling structure.

A display device comprising a backboard structure, the backboard structure comprising:

• an array substrate;
• an auxiliary electrode layer, formed on the array substrate;
• a passivation layer, formed on the array substrate and covering the auxiliary electrode layer;
• a planarization layer, formed on the side of the passivation layer away from the array substrate, and a hole formed through the passivation layer at a position corresponding to the auxiliary electrode layer;
• a padding portion, formed on an inner wall of the hole and covering a portion of the auxiliary electrode layer;
• a pixel definition layer, formed on the side of the planarization layer away from the passivation layer, wherein the pixel definition layer comprises an extension section for covering the inner wall of the hole, the extension section forms an overlapping hole and extends towards the padding portion, and a drilling structure is formed at an end of the extension section;
• and
• a cathode layer, formed on one side of the pixel definition layer away from the planarization layer, and having a continuous overlap section overlapped with the auxiliary electrode layer through the overlapping hole and the drilling structure.