Light emitting element having a partitioned semiconductor layer with different sidewall slopes, method of manufacturing the same, and display device comprising the light emitting element

A method of manufacturing a light emitting element, the method comprising:

• forming a light emitting stack structure including a first semiconductor layer, an active layer, a second semiconductor layer, and a first electrode on a substrate;
• exposing an area of the first semiconductor layer by forming a first mask pattern on the first electrode and etching the light emitting stack structure in a vertical direction through a first etching process using the first mask pattern;
• forming a second mask pattern on the light emitting stack structure;
• exposing the substrate by etching an area of the first semiconductor layer through a second etching process using the second mask pattern;
• forming a light emitting stack pattern by etching a side of the first semiconductor layer not covered by the second mask pattern, through a third etching process;
• exposing the first electrode by removing the first mask pattern and the second mask pattern;
• and
• forming an insulating film surrounding a surface of the light emitting stack pattern by forming an insulating material layer on the light emitting stack pattern and etching the insulating material layer in the vertical direction, wherein
• the first semiconductor layer is partitioned into a first area, a second area, and a third area sequentially in the direction away from the active layer toward the substrate, with the first area in direct contact with the second area and the second area in direct contact with the third area, in the forming of the light emitting stack pattern, and
• a side of the first area is inclined in a same direction as a side of the active layer, a side of the second area is inclined in a direction opposite to the direction in which the side of the active layer is inclined, and a side of the third area includes a straight line part parallel to the vertical direction.

A display device comprising:

• pixels disposed on a substrate, wherein
• each of the pixels includes:
• at least one transistor disposed on the substrate;
• a pixel electrode electrically connected to the at least one transistor;
• a bank disposed on the pixel electrode, the bank including an opening exposing the pixel electrode;
• a light emitting element disposed in the opening of the bank to be bonded to the pixel electrode, the light emitting element including a first end portion and a second end portion facing each other in a length direction;
• and
• a common electrode disposed on the light emitting element, wherein
• the light emitting element includes:
• a third electrode;
• a second electrode;
• a first electrode;
• a second semiconductor layer;
• an active layer;
• and
• a first semiconductor layer disposed in a direction toward the common electrode from the pixel electrode,
• the first semiconductor layer includes a first area, a second area, and a third area partitioned sequentially in the direction toward the common electrode from the pixel electrode, and
• a side of the first area is inclined in a same direction as the side of the active layer, a side of the second area is inclined in a direction opposite to the direction in which the side of the active layer is inclined, and a side of the third area includes a straight line part parallel to the length direction.