Light emitting material and method for manufacturing same

A method of producing a luminescent material, the method comprising:

• providing second semiconductor nanoparticles that comprise first semiconductor nanoparticles and a deposit arranged on surfaces of the first semiconductor nanoparticles, and that emit light when irradiated with light;
• obtaining a mixture that comprises the second semiconductor nanoparticles, a compound containing at least one of Zn and Ga, a compound containing at least one of S and O, and a solvent;
• and
• obtaining, from the mixture, a metal compound which comprises at least one of Zn and Ga and at least one of S and O, and in which the second semiconductor nanoparticles are embedded,
• wherein
• the first semiconductor nanoparticles comprise M1, M2, and Z,
• M1 is at least one selected from the group consisting of Ag, Cu, Au and alkali metals, and comprises at least Ag,
• M2 is at least one selected from the group consisting of Al, Ga, In and Tl, and comprises at least one of In and Ga,
• Z comprises at least one selected from the group consisting of S, Se, and Te,
• the first semiconductor nanoparticles have a composition in which a total content ratio of M1 is 10% by mole or more and 30% by mole or less, a total content ratio of M2 is 15% by mole or more and 35% by mole or less, and a total content ratio of Z is 35% by mole or more and 55% by mole or less, and
• the deposit comprises a semiconductor that is substantially composed of at least one selected from the group consisting of Al, Ga, In, Tl and alkali metals, and at least one selected from the group consisting of S, O, Se and Te, and
• the first semiconductor particles are chalcopyrite-type semiconductor having a tetragonal crystal structure.