Electron transport layer for perovskite solar cell and perovskite solar cell including same
AssigneeUIF (University Industry Foundation), Yonsei University
InventorsJong Hyeok Park, Jung Hwan Lee
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AssigneeUIF (University Industry Foundation), Yonsei University
InventorsJong Hyeok Park, Jung Hwan Lee
Estimating the term…
The present disclosure relates to an electron transport layer for a perovskite solar cell, which is tin oxide (SnO2-x, 0<x<1) comprising oxygen vacancies, wherein the oxygen vacancies are passivated by oxidized black phosphorus quantum dots (O-BPs), and a perovskite solar cell including the same. The electron transport layer for a perovskite solar cell of the present disclosure can prevent phase transition to a structure having semiconductor properties not suitable for solar cells, such as δ-FAPbI3 or PbI2, due to the occurrence of iodine interstitials (Ii) in the perovskite structure caused by deficiency of oxygen atoms in SnO2-x at the interface, by passivating the oxygen vacancies with oxidized black phosphorus quantum dots (O-BPs) containing multiple P═O bonds.
An electron transport layer for a halide perovskite solar cell, which is tin oxide (SnO2-x, 0<x<1) comprising oxygen vacancies, wherein the oxygen vacancies are passivated by oxidized black phosphorus quantum dots (O-BPs).
A method for preparing a perovskite solar cell, comprising:
Dependencies are inferred from the claim text.