# US 12,765,148 B2 · Light-emitting structure > Agents: this data is available as JSON from the patentgrep API and MCP server — see https://patentgrep.com/llms.txt - Number: US 12,765,148 B2 - Document ID: US12765148B2 - Status: Granted - Kind: B2 - Application number: 18/356,490 - Filed: 2023-07-21 - Published: 2024-07-11 - Granted: 2026-10-13 - Earliest claimed: 2023-01-11 - Assignees: Enkris Semiconductor, Inc. - Applicants: Enkris Semiconductor, Inc. - Inventors: Kai Cheng - Web page: https://patentgrep.com/patent/US12765148B2 ## CPC - H10H 29/142: {Two-dimensional arrangements, e.g. asymmetric LED layout} - H10H: INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS ## Abstract A light-emitting structure includes: a first region and a second region, where the second region surrounds the first region; the first region includes a plurality of first light-emitting units, and the second region includes a plurality of second light-emitting units; and a distance between adjacent first light-emitting units is less than a distance between adjacent second light-emitting units in a circumferential direction or a radial direction of the light-emitting structure. The distance between the adjacent second light-emitting units of the second region arranged on the edge is large, which improves a doping rate of a light-emitting element in the second region, so that doping rates of the light-emitting element in the first region and the second region tend to be equal, thereby solving a problem of uneven light-emitting wavelengths in the first region and the second region when the light-emitting unit is prepared by epitaxy. ## Claims ### Claim 1 A light-emitting structure, comprising: a first region and a second region surrounding the first region; wherein the first region comprises a plurality of first light-emitting units, the second region comprises a plurality of second light-emitting units; and a distance between adjacent first light-emitting units of the plurality of first light-emitting units is less than a distance between adjacent second light-emitting units of the plurality of second light-emitting units in a circumferential direction of the light-emitting structure and in a radial direction of the light-emitting structure; wherein an areal occupancy of the plurality of first light-emitting units in the first region is higher than an areal occupancy of the plurality of second light-emitting units in the second region per unit area, so as to increase a doping rate of a light-emitting element in an active layer in the second region relative to the first region, such that a ratio of a light-emitting element content in the active layer of the first light-emitting unit to a light-emitting element content in the active layer of the second light-emitting unit ranges from 0.95 to 1.05. ### Claim 2 (depends on 1) The light-emitting structure according to claim 1, wherein the distance between adjacent first light-emitting units of the plurality of first light-emitting units is equal in the radial direction of the light-emitting structure. ### Claim 3 (depends on 1) The light-emitting structure according to claim 1, wherein the distance between adjacent second light-emitting units of the plurality of second light-emitting units is equal in the radial direction of the light-emitting structure. ### Claim 4 (depends on 1) The light-emitting structure according to claim 1, wherein the distance between adjacent first light-emitting units of the plurality of first light-emitting units is equal in the circumferential direction of the light-emitting structure. ### Claim 5 (depends on 1) The light-emitting structure according to claim 1, wherein the distance between adjacent second light-emitting units of the plurality of second light-emitting units is equal in the circumferential direction of the light-emitting structure. ### Claim 6 (depends on 1) The light-emitting structure according to claim 1, wherein in the radial direction of the light-emitting structure, the closer the first light-emitting unit to the second region is, the greater the distance between adjacent first light-emitting units is. ### Claim 7 (depends on 1) The light-emitting structure according to claim 1, wherein in the radial direction of the light-emitting structure, the further away the second light-emitting unit from the first region is, the greater the distance between adjacent second light-emitting units is. ### Claim 8 (depends on 1) The light-emitting structure according to claim 1, wherein in the circumferential direction of the light-emitting structure, the closer the first light-emitting unit to the second region is, the greater the distance between adjacent first light-emitting units is. ### Claim 9 (depends on 1) The light-emitting structure according to claim 1, wherein in the circumferential direction of the light-emitting structure, the further away the second light-emitting unit from the first region is, the greater the distance between adjacent second light-emitting units is. ### Claim 10 (depends on 1) The light-emitting structure according to claim 1, wherein in the circumferential direction and the radial direction of the light-emitting structure, the closer the first light-emitting unit to the second region is, the greater the distance between adjacent first light-emitting units is; and the further away the second light-emitting unit from the first region is, the greater the distance between adjacent second light-emitting units is. ### Claim 11 (depends on 1) The light-emitting structure according to claim 1, wherein in the circumferential direction or the radial direction of the light-emitting structure, the distance between the adjacent second light-emitting units is 1.1~3 times the distance between the adjacent first light-emitting units. ### Claim 12 (depends on 1) The light-emitting structure according to claim 1, wherein a ratio of an area of the first region to an area of the light-emitting structure ranges from 0.3 to 0.98. ### Claim 13 (depends on 1) The light-emitting structure according to claim 1, wherein the active layer of the first light-emitting unit or the second light-emitting unit is a single quantum well of InGaN or AlGaN, or a plurality of quantum wells composed of InGaN/GaN or AlGaN/GaN, or a GaN-based material doped with indium element or aluminum element. ### Claim 14 (depends on 1) The light-emitting structure according to claim 1, wherein the light-emitting element is indium or aluminum. ### Claim 15 (depends on 1) The light-emitting structure according to claim 1, wherein a shape of the first region is any one of a circle, an ellipse and a polygon. ### Claim 16 (depends on 1) The light-emitting structure according to claim 1, wherein an area of the first light-emitting unit is greater than or equal to an area of the second light-emitting unit. ### Claim 17 (depends on 1) The light-emitting structure according to claim 1, comprising a patterned substrate and light-emitting units arranged in layers, wherein the patterned substrate comprises a columnar structure and a groove arranged at intervals, and the light-emitting units comprise the first light-emitting units arranged in the first region and the second light-emitting units arranged in the second region; and the light-emitting units are arranged on the columnar structure or in the groove. ### Claim 18 (depends on 17) The light-emitting structure according to claim 17, wherein the light-emitting units are arranged in a form of radial diffusion or in a form of matrix. ### Claim 19 (depends on 1) The light-emitting structure according to claim 1, wherein the first light-emitting unit and the second light-emitting unit comprise a first pixel, a second pixel and a third pixel respectively, and cross-sectional area of the first pixel, the second pixel and the third pixel increases sequentially.