# US 12,765,146 B2 · Method for manufacturing an image display device including roughening a light-emitting surface

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- Number: US 12,765,146 B2
- Document ID: US12765146B2
- Status: Granted
- Kind: B2
- Application number: 18/474,548
- Filed: 2023-09-26
- Published: 2024-01-18
- Granted: 2026-10-13
- Earliest claimed: 2021-03-30
- Assignees: Nichia Corporation
- Applicants: Nichia Corporation
- Inventors: Hajime Akimoto
- Web page: https://patentgrep.com/patent/US12765146B2

## CPC

- H10H 20/857: Interconnections, e.g. lead-frames, bond wires or solder balls
- H10D 86/441: {Interconnections, e.g. scanning lines}
- H10D 86/60: wherein the TFTs are in active matrices
- H10H 20/8514: {characterised by their shape, e.g. plate or foil}
- H10W 90/00: Package configurations
- H10H 20/0361: {of wavelength conversion means}
- H10H 20/0364: {of interconnections}
- H10H: INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
- H10D: INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10W: GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10

## Abstract

A method for manufacturing an image display device according to an embodiment includes: preparing a first substrate that includes a circuit element formed on a first surface of a substrate, a first wiring layer connected to the circuit element, and a first insulating film covering the circuit element and the first wiring layer; forming a graphene-including layer on the first insulating film; forming a semiconductor layer that includes a light-emitting layer on the graphene-including layer; forming a light-emitting element that includes a light-emitting surface on the graphene-including layer and includes a top surface at a side opposite to the light-emitting surface by patterning the semiconductor layer; forming a second insulating film covering the first insulating film, the graphene-including layer, and the light-emitting element; forming a first via extending through the first and second insulating films; and forming a second wiring layer on the second insulating film.

## Claims

### Claim 1

A method for manufacturing an image display device, the method comprising:
preparing a first substrate that comprises:
a circuit element formed on a first surface of a substrate,
a first wiring layer connected to the circuit element, and
a first insulating film covering the circuit element and the first wiring layer;
forming a graphene-including layer on the first insulating film;
forming a semiconductor layer on the graphene-including layer, the semiconductor layer comprising a light-emitting layer;
forming a light-emitting element by patterning the semiconductor layer, the light-emitting element including:
a light-emitting surface on the graphene-including layer, and
a top surface at a side opposite to the light-emitting surface;
forming a second insulating film covering the first insulating film, the graphene-including layer, and the light-emitting element;
forming a first via extending through the first and second insulating films; and
forming a second wiring layer on the second insulating film;
removing the substrate;
forming a wavelength conversion member in place of the substrate that has been removed; and
exposing the light-emitting surface and roughening the light-emitting surface by forming an opening extending through the first insulating film, wherein:
the first via is located between the first wiring layer and the second wiring layer and electrically connects the first wiring layer and the second wiring layer.

### Claim 2 (depends on 1)

The method according to claim 1, further comprising:
forming a second via extending through the second insulating film, wherein:
the light-emitting element comprises a connection part located along the first surface, and
the second via is located between the second wiring layer and the connection part and electrically connects the second wiring layer and the connection part.

### Claim 3 (depends on 1)

The method according to claim 1, further comprising:
before the formation of the graphene-including layer, forming a third wiring layer on the first insulating film, the third wiring layer being light-transmissive; and
forming a second via extending through the second insulating film, the second via being located between the second wiring layer and the third wiring layer and electrically connecting the first wiring layer and the third wiring layer.

### Claim 4 (depends on 1)

The method according to claim 1, further comprising:
before the forming of the second insulating film, forming a fourth wiring layer to cover the top surface and a side surface of the light-emitting element.

### Claim 5 (depends on 1)

The method according to claim 1, wherein:
the wavelength conversion member comprises a light-shielding part and a color conversion part, and
the color conversion part is formed inside the opening.

### Claim 6 (depends on 1)

The method according to claim 1, wherein:
the preparing of the first substrate comprises forming a light-shielding layer on the circuit element.

### Claim 7 (depends on 1)

The method according to claim 1, wherein:
the semiconductor layer comprises a gallium nitride compound semiconductor.

### Claim 8 (depends on 1)

The method according to claim 1, wherein:
the substrate is light-transmissive.

### Claim 9 (depends on 8)

The method according to claim 8, further comprising:
forming a wavelength conversion member at a second surface of the substrate, the second surface being at a side opposite to the first surface.