# US 12,765,131 B2 · ULED light-emitting and display device without electrical contact, external carrier injection and mass transfer and preparation method thereof

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- Number: US 12,765,131 B2
- Document ID: US12765131B2
- Status: Granted
- Kind: B2
- Application number: 17/768,509
- Filed: 2020-08-31
- Published: 2024-03-21
- Granted: 2026-10-13
- Earliest claimed: 2019-10-16
- Assignees: Fuzhou University; Mindu Innovation Lab
- Applicants: Fuzhou University; Mindu Innovation Lab
- Inventors: Tailiang Guo; Kun Wang; Chaoxing Wu; Dianlun Li; Yongai Zhang; Xiongtu Zhou; Ye Liu
- Web page: https://patentgrep.com/patent/US12765131B2

## CPC

- H10H 20/8506: {Containers}
- H10H 20/018: {Bonding of wafers}
- H10H 20/0363: {of optical field-shaping means}
- H10H 20/81: Bodies
- H10H 20/811: having quantum effect structures or superlattices, e.g. tunnel junctions
- H10H 20/855: Optical field-shaping means, e.g. lenses
- H10H 20/857: Interconnections, e.g. lead-frames, bond wires or solder balls
- H10W 90/00: Package configurations
- H10H 20/032: {of electrodes}
- H10H 20/0364: {of interconnections}
- H10H: INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
- H10W: GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10

## Abstract

The present invention relates to a μLED light-emitting and display device without electrical contact, external carrier injection and mass transfer and a preparation method thereof. The μLED light-emitting and display device includes one or more light-emitting pixels, and each light-emitting pixel includes a pixel lower electrode, a lower insulation layer, a μLED chip, an upper insulation layer and a pixel upper electrode from bottom to top, wherein the upper insulation layer and the lower insulation layer prevent the μLED chip from being in direct electrical contact with the pixel lower electrode and the pixel upper electrode, and the μLED chip is lit by an alternating electric field through electromagnetic coupling. In the present invention, the μLED chip is not in electrical contact with a driving electrode, such that a structure of the μLED chip may be simplified, a μLED chip array may be disposed in a manner such as ink-jet printing, screen printing, spin coating, brush coating, roll coating or chemical self-assembly, the use of a mass transfer process and a complex bonding process of the μLED chip and a driving array may be avoided, a manufacturing period of the μLED device is effectively shortened and manufacturing costs are reduced, and it is expected to enhance the market competitiveness of the μLED.

## Claims

### Claim 1

A method for manufacturing a micro light emitting diode (μLED) light-emitting and display device without electrical contact, external carrier injection and mass transfer, comprising the following steps:
in Step1, obtaining a self-supporting μLED chip which comprises a P-type semiconductor layer, a light emitting layer and an N-type semiconductor layer stacked to form a light-emitting semiconductor junction, wherein the μLED chip is obtained by growing an LED thin film structure capable of generating a light source in three primary colors red, green, and blue on a surface of a semiconductor substrate and forming a μLED chip pattern with a desired size by cutting and peeling;
in Step2, preparing a lower electrode array of a sub-pixel having three primary colors red, green, and blue, a thin film transistor driving array, and an electrical connection line therebetween on the surface of the substrate;
in Step3, realizing non-electrical contact between the μLED chip and a corresponding sub-pixel lower electrode through an insulation layer preparation process by disposing red, green and blue μLED chips on a surface of a lower electrode of the sub-pixel having three primary colors red, green, and blue correspondingly and respectively; and
in Step4, realizing non-electrical contact between the μLED chip and a corresponding sub-pixel upper electrode through the insulation layer preparation process by disposing a pixel upper electrode and an electrical connection line thereof on the surface of the substrate provided with red, green and blue μLED chips, so as to obtain the μLED light-emitting and display device without electrical contact, external carrier injection and mass transfer.

### Claim 2 (depends on 1)

The method according to claim 1, wherein in Step3, the red, green and blue μLED chips are disposed at desired positions respectively in a manner of ink-jet printing, screen printing, spin coating, brush coating, roll coating, chemical self-assembly, or electromagnetic self-assembly.

### Claim 3 (depends on 1)

The method according to claim 1, wherein in Step3, realizing the non-electrical contact between the μLED chip and the corresponding sub-pixel lower electrode through the insulation layer preparation process specifically comprises: realizing the non-electrical contact between the μLED chip and a pixel lower electrode by firstly preparing an insulation layer on a surface of a pixel lower electrode array, and then disposing the μLED chip on a surface of the insulation layer.

### Claim 4 (depends on 1)

The method according to claim 1, wherein in Step3, realizing the non-electrical contact between the μLED chip and the corresponding sub-pixel lower electrode through the insulation layer preparation process specifically comprises: realizing the non-electrical contact between the μLED chip and a pixel lower electrode by wrapping an insulation layer on a surface of the μLED chip, and then preparing the μLED chip wrapped with the insulation layer on a surface of the pixel lower electrode.

### Claim 5 (depends on 1)

The method according to claim 1, wherein in Step4, the pixel upper electrode and the electrical connection line thereof are prepared by lamination or growth.

### Claim 6 (depends on 1)

The method according to claim 1, wherein in Step4, realizing the non-electrical contact between the μLED chip and the corresponding sub-pixel upper electrode through the insulation layer preparation process specifically comprises: realizing the non-electrical contact between the μLED chip and the pixel upper electrode by firstly depositing an insulation layer on a surface of the μLED chip, and then preparing the pixel upper electrode on a surface of the insulation layer.

### Claim 7 (depends on 1)

The method according to claim 1, wherein in Step4, realizing the non-electrical contact between the μLED chip and the corresponding sub-pixel upper electrode through the insulation layer preparation process specifically comprises: realizing the non-electrical contact between the μLED chip and the pixel upper electrode by firstly preparing an insulation layer on a surface of the pixel upper electrode, and then manufacturing the upper electrode and the insulation layer on a surface of the μLED chip through a lamination technology.