Back to results
US 12,765,123 B2Granted
Light emitting element and display device
AssigneeSamsung Display Co., Ltd.
InventorsJong Won Lee, Bong Chun Park, Kwan Jae Lee, So Young Lee, Jin Hyuk Jang, Chan Woo Joo, Seon Hong Choi
Life of this patent
Estimating the term…
Abstract
A light emitting element may include a first semiconductor layer, a second semiconductor layer including a first area, a second area, and a third area that have different doping concentrations, an active layer disposed between the first semiconductor layer and the second semiconductor layer, and a first intermediate layer and a second intermediate layer that are disposed between at least one of the first area, the second area, and the third area. The first intermediate layer and the second intermediate layer may include different materials.
Claims16
A light emitting element comprising:
- a first semiconductor layer;
- a second semiconductor layer including a first area, a second area, and a third area that have different doping concentrations;
- an active layer disposed between the first semiconductor layer and the second semiconductor layer;
- and
- a first intermediate layer and a second intermediate layer that are disposed between at least one of the first area, the second area, and the third area,
- wherein the first intermediate layer and the second intermediate layer include different materials,
- wherein a doping concentration of the second area is greater than a doping concentration of the first area and less than a doping concentration of the third area,
- wherein the first area is directly disposed on the active layer, and
- wherein at least one of the first intermediate layer or the second intermediate layer is between the second area and the third area.
6 more elements
A light emitting element comprising:
- a first semiconductor layer;
- a second semiconductor layer including a first area, a second area, and a third area that have different doping concentrations;
- an active layer disposed between the first semiconductor layer and the second semiconductor layer;
- and
- a first intermediate layer and a second intermediate layer that are disposed between at least one of the first area, the second area, and the third area,
- wherein the first intermediate layer and the second intermediate layer include different materials,
- wherein a doping concentration of the second area is greater than a doping concentration of the first area and less than a doping concentration of the third area,
- wherein the first area is directly disposed on the active layer, and
- wherein the first intermediate layer and the second intermediate layer each include at least one of AlGaN, GaN, AlGaInN, AlN, SiN, Si3N4, and BN.
6 more elements
A display device comprising:
- a first electrode and a second electrode that are spaced apart from each other;
- and
- light emitting elements disposed between the first electrode and the second electrode, wherein
- each of the light emitting elements comprises:
- a first semiconductor layer;
- a second semiconductor layer including a first area, a second area, and a third area that have different doping concentrations;
- an active layer disposed between the first semiconductor layer and the second semiconductor layer;
- and
- a first intermediate layer and a second intermediate layer that are disposed between at least one of the first area, the second area, and the third area,
- the first intermediate layer and the second intermediate layer include different materials,
- wherein a doping concentration of the second area is greater than a doping concentration of the first area and less than a doping concentration of the third area,
- wherein the first area is directly disposed on the active layer, and
- wherein at least one of the first intermediate layer or the second intermediate layer is between the second area and the third area.
10 more elements
A display device comprising:
- a first electrode and a second electrode that are spaced apart from each other;
- and
- light emitting elements disposed between the first electrode and the second electrode, wherein
- each of the light emitting elements comprises:
- a first semiconductor layer;
- a second semiconductor layer including a first area, a second area, and a third area that have different doping concentrations;
- an active layer disposed between the first semiconductor layer and the second semiconductor layer;
- and
- a first intermediate layer and a second intermediate layer that are disposed between at least one of the first area, the second area, and the third area,
- the first intermediate layer and the second intermediate layer include different materials,
- wherein a doping concentration of the second area is greater than a doping concentration of the first area and less than a doping concentration of the third area,
- wherein the first area is directly disposed on the active layer, and
- wherein the first intermediate layer and the second intermediate layer each include at least one of AlGaN, GaN, AlGaInN, AlN, SiN, Si3N4, and BN.
10 more elements
Dependencies are inferred from the claim text.