Methods of manufacture of light emitting device having monolithic quantum nanowire structure
AssigneeThe Regents of the University of Michigan
InventorsZetian Mi, Yong-Ho Ra, Renjie Wang
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Abstract
InGaN/GaN quantum layer nanowire light emitting diodes are fabricated into a single cluster capable of exhibiting a wide spectral output range. The nanowires having InGaN/GaN quantum layers formed of quantum dots are tuned to different output wavelengths using different nanowire diameters, for example, to achieve a full spectral output range covering the entire visible spectrum for display applications. The entire cluster is formed using a monolithically integrated fabrication technique that employs a single-step selective area epitaxy growth.
Claims23
A method of fabricating a semiconductor device, the method comprising:
- providing a substrate;
- depositing a metallic mask on the substrate, the metallic mask having a pattern of spaced apart openings, each of a different size;
- growing a plurality of stand-alone nanowires through application of an epitaxial crystal growth technique such that each nanowire has a different diameter determined by the size of one of the spaced apart openings;
- and
- forming each nanowire to have a quantum active layer structure, such that each nanowire is configured to emit a photonic output at a different wavelength corresponding to the diameter of the nanowire, wherein a ratio of a first group III element and a second group III element in the quantum active layer structure is dependent on the diameter of the openings to determine a wavelength of the quantum active layer structure to emit the photonic output.
A method of fabricating a device, the method comprising:
- depositing a mask on a substrate, the mask having formed therein a pattern of openings, wherein the openings have different effective diameters, and wherein the openings are spaced a distance apart from one another;
- growing epitaxially a plurality of nanowires at each of the openings, the plurality of nanowires comprising nanowires having different effective diameters corresponding to the effective diameters of the openings, wherein the nanowires are spaced apart from one another by a distance corresponding to the distance between the openings;
- and
- wherein said growing epitaxially comprises forming active regions in the nanowires, the active regions comprising a quantum structure comprising a first group III element and a second group III element, wherein said forming the active regions comprises directing beams toward the substrate, the beams comprising a beam comprising the first group III element and a beam comprising the second group III element, wherein a ratio of the first and second group III elements in the quantum structure is dependent on the diameter of the openings.
A method comprising:
- forming a mask on a substrate, wherein the mask includes a plurality of openings of a predetermined shape, wherein the plurality of openings include a number of different size openings, and wherein the plurality of openings are separated by a predetermined spacing, and wherein the substrate is exposed through the plurality of opening in the mask;
- epitaxially forming first semiconductor regions of a plurality of nanowires, wherein the first semiconductor regions are formed on the exposed substrate in each of the plurality of opening of the mask;
- epitaxially forming one or more quantum layers of the plurality of nanowires, wherein the one or more quantum layers are formed on each of the first semiconductor regions;
- and
- epitaxially forming third semiconductor regions of the plurality of nanowires, wherein the third semiconductor regions are formed on each of the one or more quantum layers, wherein a ratio of a first group III element and a second group III element in the quantum active layer structure is dependent on the diameter of the openings to determine a wavelength of the quantum active layer structure to emit the photonic output.
Dependencies are inferred from the claim text.