Method to remove an isolation layer on the corner between the semiconductor light emitting device to the growth substrate

A method for fabricating semiconductor light emitting devices (LEDs) comprising:

• forming a plurality of light emitting diode (LED) structures on a growth substrate, the light emitting diode (LED) structures including epitaxial structures having sidewalls and P-N junctions on the sidewalls;
• forming an isolation layer on the light emitting diode (LED) structures including on the sidewalls of the epitaxial structures, the isolation layer including corners at intersections between the light emitting diode (LED) structures and the growth substrate;
• forming an etchable covering channel layer on the isolation layer;
• forming a patterning protection layer on the etchable covering channel layer having a plurality of openings aligned with the corners of the isolation layer;
• etching a plurality of etching channels in the etchable covering channel layer using a first etching process selective to the covering channel layer, in which a first etchant passes through the openings in the patterning protection layer to selectively etch away portions of the etchable covering channel layer leaving the patterning protection layer covering the light emitting diode (LED) structures but not the corners of the isolation layer, and with the plurality of etching channels shaped and sized to surround the corners of the isolation layer;
• removing the corners of the isolation layer by etching the isolation layer using a second etching process in which a second etchant passes through the plurality of etching channels to remove the corners, leaving the isolation layer covering the sidewalls and the P-N junctions;
• removing the patterning protection layer and the etchable covering channel layer;
• and
• providing a carrier having an elastic polymer material thereon;
• transmitting the light emitting diode (LED) structures on the growth substrate to the carrier by flip chip bonding the light emitting diode (LED) structures to the elastic polymer material on the carrier while protecting the P-N junctions using the isolation layer;
• and
• separating the growth substrate from the light emitting diode (LED) structures using a laser lift off process without damaging the isolation layer on the P-N junctions.