# US 12,765,116 B2 · Back-contact solar cell and photovoltaic module > Agents: this data is available as JSON from the patentgrep API and MCP server — see https://patentgrep.com/llms.txt - Number: US 12,765,116 B2 - Document ID: US12765116B2 - Status: Granted - Kind: B2 - Application number: 19/210,362 - Filed: 2025-05-16 - Published: 2026-09-24 - Granted: 2026-10-13 - Earliest claimed: 2025-03-18 - Assignees: Yuhuan Jinko Solar Co., Ltd; Jinko Solar (Haining) Co., Ltd. - Applicants: Yuhuan Jinko Solar Co., Ltd; Jinko Solar (Haining) Co., Ltd. - Inventors: Weiyuan Duan; Yufeng Sun; Wenqi Li; Jie Yang; Xinyu Zhang - Web page: https://patentgrep.com/patent/US12765116B2 ## CPC - H10F 77/315: {the coatings being antireflective or having enhancing optical properties} - H10F: INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION ## Abstract The present disclosure relates to a back-contact solar cell and a method for preparing the same, and a photovoltaic module. The back-contact solar cell includes: a substrate, with a back side provided with a first doped portion and a second doped portion that are arranged alternately; a first doped functional layer located on the first doped portion, wherein the first doped functional layer comprises a first doped semiconductor sub-layer and at least one barrier layer that are sequentially stacked in a direction away from the substrate; a second doped semiconductor layer located on the second doped portion; and a plurality of first conductive portions arranged on a side of the first doped functional layer away from the substrate, and a plurality of second conductive portions arranged on a side of the second doped semiconductor layer away from the substrate. ## Claims ### Claim 1 A back-contact solar cell, comprising: a substrate having a front side and a back side that are arranged opposite to each other, wherein a first doped portion and a second doped portion are arranged alternately on the back side; a first doped functional layer located on the first doped portion, wherein the first doped functional layer comprises a first doped semiconductor sub-layer and at least one barrier layer that are sequentially stacked in a direction away from the substrate, a thickness of the at least one barrier layer is in a range of 0.5 nm to 3 nm, and the first doped semiconductor sub-layer comprises a first doping element, the first doped functional layer further comprising a second doped semiconductor sub-layer arranged on a side of the at least one barrier layer away from the substrate; a second doped semiconductor layer located on the second doped portion, wherein the second doped semiconductor layer comprises a second doping element having a conductivity type different from a conductivity type of the first doping element; a transparent conductive layer comprising a plurality of first conductive portions and a plurality of second conductive portions, wherein the plurality of first conductive portions are arranged on a side of the first doped functional layer away from the substrate, and the plurality of second conductive portions are arranged on a side of the second doped semiconductor layer away from the substrate; a first electrode arranged on a side of the first conductive portion away from the substrate; and a second electrode arranged on a side of the second conductive portion away from the substrate; wherein the at least one barrier layer is provided with a plurality of first holes, and a part of the first conductive portion is located in the plurality of first holes and is electrically connected to the first doped semiconductor sub-layer; and wherein the second doped semiconductor sub-layer is provided with a plurality of second holes, and the plurality of second holes are in communication with the plurality of first holes in one-to-one correspondence; wherein a part of the first conductive portion is located in the plurality of first holes and the plurality of second holes, and is electrically connected to the first doped semiconductor sub-layer. ### Claim 2 (depends on 1) The back-contact solar cell according to claim 1, wherein a thickness of the first doped semiconductor sub-layer is in a range of 30 nm to 150 nm. ### Claim 3 (depends on 1) The back-contact solar cell according to claim 1, wherein a thickness of the second doped semiconductor sub-layer is in a range of 10 nm to 60 nm. ### Claim 4 (depends on 1) The back-contact solar cell according to claim 1, wherein a concentration of the first doping element in the first doped semiconductor sub-layer is in a range of 3×1019 atom/cm3 to 5×1020 atom/cm3. ### Claim 5 A back-contact solar cell comprising: a substrate having a front side and a back side that are arranged opposite to each other, wherein a first doped portion and a second doped portion are arranged alternately on the back side; a first doped functional layer located on the first doped portion, wherein the first doped functional layer comprises a first doped semiconductor sub-layer and at least one barrier layer that are sequentially stacked in a direction away from the substrate, and the first doped semiconductor sub-layer comprises a first doping element, the first doped functional layer further comprising a second doped semiconductor sub-layer arranged on a side of the at least one barrier layer away from the substrate, the second doped semiconductor sub-layer comprising the first doping element; a second doped semiconductor layer located on the second doped portion, wherein the second doped semiconductor layer comprises a second doping element having a conductivity type different from a conductivity type of the first doping element: a transparent conductive layer comprising a plurality of first conductive portions and a plurality of second conductive portions, wherein the plurality of first conductive portions are arranged on a side of the first doped functional layer away from the substrate, and the plurality of second conductive portions are arranged on a side of the second doped semiconductor layer away from the substrate; a first electrode arranged on a side of the first conductive portion away from the substrate; and a second electrode arranged on a side of the second conductive portion away from the substrate; wherein the at least one barrier layer is provided with a plurality of first holes, and a part of the first conductive portion is located in the plurality of first holes and is electrically connected to the first doped semiconductor sub-layer; and wherein the second doped semiconductor sub-layer is provided with a plurality of second holes, and the plurality of second holes are in communication with the plurality of first holes in one-to-one correspondence; wherein a part of the first conductive portion is located in the plurality of first holes and the plurality of second holes, and is electrically connected to the first doped semiconductor sub-layer. ### Claim 6 (depends on 5) The back-contact solar cell according to claim 5, wherein a concentration of the first doping element in the second doped semiconductor sub-layer is in a range of 4×1019 atom/cm3 to 5×1020 atom/cm3. ### Claim 7 (depends on 1) The back-contact solar cell according to claim 1, wherein a material of the at least one barrier layer comprises at least one of silicon oxide, silicon nitride, and silicon oxynitride. ### Claim 8 (depends on 1) The back-contact solar cell according to claim 1, further comprising: a tunneling layer located between the substrate and the first doped functional layer; and an intrinsic microcrystalline silicon layer located between the substrate and the second doped semiconductor layer. ### Claim 9 (depends on 1) The back-contact solar cell according to claim 1, wherein a thickness of the first doped functional layer is greater than a thickness of the second doped semiconductor layer. ### Claim 10 (depends on 8) The back-contact solar cell according to claim 8, wherein a thickness of the tunneling layer is in a range of 0.5 nm to 1.5 nm. ### Claim 11 (depends on 8) The back-contact solar cell according to claim 8, wherein a thickness of the intrinsic microcrystalline silicon layer is in a range of 4 nm to 14 nm. ### Claim 12 (depends on 1) The back-contact solar cell according to claim 1, wherein the first doping element is an N-type doping element, and the second doping element is a P-type doping element. ### Claim 13 (depends on 1) The back-contact solar cell according to claim 1, wherein the back side is further provided with a gap between the first doped portion and the second doped portion, the first doped functional layer and adjacent second doped semiconductor layer are spaced apart by the gap, and the first conductive portion and adjacent second conductive portion are spaced apart by the gap. ### Claim 14 (depends on 1) The back-contact solar cell according to claim 1, wherein both the first doped portion and the second doped portion comprise a first sub-area and a second sub-area, and the first electrode or the second electrode is arranged in the first sub-area. ### Claim 15 (depends on 14) The back-contact solar cell according to claim 14, wherein the first sub-area is classified as a metal contact area, the second sub-area is classified as a non-metal contact area; and a width of the metal contact area is greater than a width of the first electrode, or a width of the metal contact area is greater than a width of the second electrode. ### Claim 16 (depends on 1) The back-contact solar cell according to claim 1, wherein a material of the transparent conductive layer comprises at least one of indium tin oxide, indium tungsten oxide, zinc aluminum oxide, titanium-doped indium oxide, and fluorine-doped tin oxide. ### Claim 17 (depends on 1) The back-contact solar cell according to claim 1, further comprising a passivation layer and an anti-reflection layer that are sequentially stacked on the front side. ### Claim 18 (depends on 1) A photovoltaic module, comprising: at least one cell string formed by connecting a plurality of back-contact solar cells according to claim 1; an interconnector electrically connected to two adjacent back-contact solar cells; a packaging film covering a surface of the at least one cell string; and a cover plate covering a surface of the packaging film away from the at least one cell string.