# US 12,765,112 B2 · Photodiode structure and manufacturing method thereof

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- Number: US 12,765,112 B2
- Document ID: US12765112B2
- Status: Granted
- Kind: B2
- Application number: 18/495,100
- Filed: 2023-10-26
- Published: 2024-05-02
- Granted: 2026-10-13
- Earliest claimed: 2022-11-02
- Assignees: Taiwan-Asia Semiconductor Corporation
- Applicants: Taiwan-Asia Semiconductor Corporation
- Inventors: Chun-Chieh Lin
- Web page: https://patentgrep.com/patent/US12765112B2

## CPC

- H10F 77/306: {for devices having potential barriers}
- H10F 71/00: Manufacture or treatment of devices covered by this subclass (patterning processes to connect thin photovoltaic cells in integrated devices, or assemblies of multiple devices, having photovoltaic cells H10F19/33; manufacture or treatment of encapsulations or containers for integrated devices, or assemblies of multiple devices, having photovoltaic cells H10F19/80; manufacture or treatment of integrated devices, or assemblies of multiple devices, comprising at least one element in which radiation controls the flow of current H10F39/00)
- A61B 5/14551: {for measuring blood gases}
- H10F: INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- A61B: DIAGNOSIS; SURGERY; IDENTIFICATION (usefulness limited to only animals A61D)

## Abstract

A manufacturing method of a photodiode structure includes the following steps: providing a substrate; performing an epitaxial process to form a first semiconductor layer on the substrate; performing an active area patterning and etching process to form a recessed portion on the first semiconductor layer; performing a first coating process to form a first anti-reflection layer on the first semiconductor layer; and performing an ion implantation process to pass through the first anti-reflection layer and form a second semiconductor layer in the recessed portion.

## Claims

### Claim 1

A manufacturing method of a photodiode structure, comprising:
providing a substrate;
performing an epitaxial process to form a first semiconductor layer on the substrate;
performing an active area patterning etching process to form a recessed portion on the first semiconductor layer;
performing a first coating process to form a first anti-reflection layer on the first semiconductor layer;
performing an ion implantation process to pass through the first anti-reflection layer and form a second semiconductor layer in the recessed portion;
performing a second coating process to form a second anti-reflection layer on the first anti-reflection layer;
performing a first metallization process to form a first electrode electrically connected to the substrate; and
performing a second metallization process to form a second electrode electrically connected to the second semiconductor layer.

### Claim 2 (depends on 1)

The manufacturing method of claim 1, wherein the first coating process is a high temperature low-pressure chemical vapor deposition process.

### Claim 3 (depends on 2)

The manufacturing method of claim 2, wherein a process temperature of the first coating process is not lower than 800° C.

### Claim 4 (depends on 1)

The manufacturing method of claim 1, wherein the first anti-reflection layer has a thickness ranging between 20 nm and 30 nm.

### Claim 5 (depends on 1)

The manufacturing method of claim 1, wherein the first anti-reflection layer is formed by a low-pressure chemical vapor deposition process.

### Claim 6 (depends on 1)

The manufacturing method of claim 1, wherein the second coating process is a physical vapor deposition process, and a process temperature of the second coating process is lower than a process temperature of the first coating process.

### Claim 7 (depends on 6)

The manufacturing method of claim 6, wherein the process temperature of the second coating process is not higher than 200° C.

### Claim 8 (depends on 1)

The manufacturing method of claim 1, wherein the second anti-reflection layer has a thickness ranging between 100 nm and 150 nm.

### Claim 9 (depends on 1)

The manufacturing method of claim 1, wherein the second anti-reflection layer is formed by a physical vapor deposition process.

### Claim 10 (depends on 1)

The manufacturing method of claim 1, wherein the first semiconductor layer is an N-type semiconductor layer, the second semiconductor layer is a P-type semiconductor layer, the first electrode is a negative electrode, and the second electrode is a positive electrode.

### Claim 11 (depends on 1)

A photodiode structure manufactured by using the manufacturing method of claim 1.