Solid-state imaging device, method of manufacturing solid-state imaging device, and electronic device

A solid-state imaging device, comprising:

• a first substrate;
• a second substrate laminated on the first substrate by direct bonding on a side opposite to a light incident side of the first substrate, the second substrate having a size different from a size of the first substrate;
• a third substrate provided on a side opposite to a light incident side of the second substrate;
• and
• an insulating layer formed between the first substrate and the third substrate,
• wherein the third substrate includes a well formed on a light incident side of the third substrate,
• wherein the well included in the third substrate is formed up to a region corresponding to an end surface of the second substrate facing the insulating layer, and
• wherein an end surface of the well and the end surface of the second substrate are substantially flush with each other.

A solid-state imaging device, comprising:

• a first substrate;
• a second substrate laminated on the first substrate by direct bonding on a side opposite to a light incident side of the first substrate, the second substrate having a size different from a size of the first substrate;
• a third substrate provided on a side opposite to a light incident side of the second substrate;
• and
• an insulating layer formed between the first substrate and the third substrate,
• wherein the third substrate includes a well formed on a light incident side of the third substrate,
• wherein the well included in the third substrate is formed up to a region corresponding to an outside of an end surface of the second substrate facing the insulating layer,
• wherein an end surface of the well is not flush with the end surface of the second substrate, and
• wherein the end surface of the well is located in a region corresponding to the insulating layer.

A solid-state imaging device, comprising:

• a first substrate;
• a second substrate laminated on the first substrate by direct bonding on a side opposite to a light incident side of the first substrate, the second substrate having a size different from a size of the first substrate;
• a third substrate provided on a side opposite to a light incident side of the second substrate;
• and
• an insulating layer formed between the first substrate and the third substrate,
• wherein the third substrate includes a well formed on a light incident side of the third substrate, and
• wherein at least a partial region of a surface of the third substrate in contact with the second substrate has a resistance of 1 Ωcm or more.

A solid-state imaging device, comprising:

• a first substrate;
• a second substrate laminated on the first substrate by direct bonding on a side opposite to a light incident side of the first substrate, the second substrate having a size different from a size of the first substrate;
• a third substrate provided on a side opposite to a light incident side of the second substrate;
• and
• an insulating layer formed between the first substrate and the third substrate,
• wherein the third substrate includes a well formed on a light incident side of the third substrate, and
• wherein a surface of the second substrate in contact with the third substrate and a surface of the insulating layer in contact with the third substrate are substantially flush with each other.