Imager with variable nanostructure

An image sensor comprising:

• a pixel array including a first pixel and a second pixel;
• a first condensing area corresponding to the first pixel and including a first nanogroup having at least one nanostructure;
• and
• a second condensing area corresponding to the second pixel and including a second nanogroup having at least one nanostructure, the second pixel at a distance farther from a center of the pixel array than the first pixel is from the center of the pixel array,
• wherein the at least one nanostructure included in the first nanogroup and the at least one nanostructure included in the second nanogroup are arranged so that a condensing capability of the at least one nanostructure included in the second nanogroup is greater than a condensing capability of the at least one nanostructure included in the first nanogroup.

An image sensor comprising:

• a pixel array including a plurality of pixels;
• a nano-condensing lens array including a plurality of condensing areas respectively corresponding to the plurality of pixels;
• a readout circuit configured to receive a pixel signal from each of the plurality of pixels and convert the pixel signal into a digital signal to generate a pixel value;
• and
• a signal processor configured to perform an image processing operation on the digital signal, wherein
• each of the plurality of condensing areas comprises at least one nanostructure configured to condense light on a corresponding pixel among the plurality of pixels, and
• nanostructures of the at least one nanostructure are arranged such that a radius of the light condensed by each of the plurality of condensing areas is increased as a distance between a center of the nano-condensing lens array and each of the plurality of condensing areas increases.