Imaging element package and electronic device

An imaging element package, comprising:

• a semiconductor substrate provided with a photodiode;
• an on-chip lens layer disposed on a light incident surface side of the semiconductor substrate;
• a support portion provided along an outer periphery of the semiconductor substrate to support a cover glass that protects a light-receiving surface of the semiconductor substrate;
• and
• an antireflection layer provided between the support portion and the semiconductor substrate at least in an area where the support portion is provided,
• wherein a light-shielding resin layer is provided on an uppermost surface of a peripheral area provided in a peripheral part that is outside of an effective pixel area where pixels effectively used for capturing images are provided,
• wherein a first portion of the light-shielding resin layer is in contact with a light incident surface side of a portion of the on-chip lens layer, and
• wherein a second portion of the light-shielding resin layer is in contact with the antireflection layer.

An electronic device comprising an imaging element package, the imaging element package comprising:

• a semiconductor substrate provided with a photodiode;
• a support portion provided along an outer periphery of the semiconductor substrate to support a cover glass that protects a light-receiving surface of the semiconductor substrate;
• an antireflection layer provided between the support portion and the semiconductor substrate at least in an area where the support portion is provided;
• and
• a light-shielding layer provided stacked on the antireflection layer with a prescribed width outwardly from a boundary between an effective pixel area where pixels effectively used for capturing images are located and a peripheral area provided in a peripheral part outside of the effective pixel area,
• wherein the light-shielding layer has an outer shape having four corners rounded in an arc shape with a prescribed radius of curvature when viewed in a plan view,
• wherein the antireflection layer is provided entirely on the light-receiving surface of the semiconductor substrate, and
• wherein the support portion is stacked on the antireflection layer.