# US 12,765,090 B2 · Image sensing device > Agents: this data is available as JSON from the patentgrep API and MCP server — see https://patentgrep.com/llms.txt - Number: US 12,765,090 B2 - Document ID: US12765090B2 - Status: Granted - Kind: B2 - Application number: 18/356,973 - Filed: 2023-07-21 - Published: 2024-08-22 - Granted: 2026-10-13 - Earliest claimed: 2023-02-22 - Assignees: SK hynix Inc. - Applicants: SK hynix Inc. - Inventors: Jae Hyung Jang - Web page: https://patentgrep.com/patent/US12765090B2 ## CPC - H10F 39/8037: {the integrated elements comprising a transistor} - H10F 39/18: Complementary metal-oxide-semiconductor [CMOS] image sensors; Photodiode array image sensors - H10F 39/8023: {Disposition of the elements in pixels, e.g. smaller elements in the centre of the imager compared to larger elements at the periphery} - H10F 39/803: {Pixels having integrated switching, control, storage or amplification elements} - H10F 39/8063: {Microlenses} - H10F 39/807: {Pixel isolation structures} - H10F 39/813: {Electronic components shared by multiple pixels, e.g. one amplifier shared by two pixels} - H10F: INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION ## Abstract Disclosed is an image sensing device, including: a plurality of pixel arrays, and the pixel arrays include: a first pixel array including a plurality of first unit pixels, and a second pixel array disposed to surround the first pixel array and including a plurality of second unit pixels, and the first unit pixel includes a plurality of photodiodes, and each photodiode of the first unit pixel is connected to a different transfer transistor. ## Claims ### Claim 1 An image sensing device, comprising: a plurality of pixel arrays, wherein the pixel arrays comprise: a first pixel array comprising a plurality of first unit pixels and a second pixel array disposed to surround the first pixel array and comprising a plurality of second unit pixels, wherein the first unit pixel comprises a plurality of photodiodes, and each photodiode of the first unit pixel is connected to a different transfer transistor, wherein the second unit pixel comprises a plurality of photodiodes, and the plurality of photodiodes of the second unit pixel is connected to a single transfer transistor. ### Claim 2 (depends on 1) The image sensing device of claim 1, wherein the plurality of photodiodes of the first unit pixel comprises a first photodiode, a second photodiode, a third photodiode, and a fourth photodiode, and wherein the first photodiode is connected to a first transfer transistor, the second photodiode is connected to a second transfer transistor, the third photodiode is connected to a third transfer transistor, and the fourth photodiode is connected to a fourth transfer transistor. ### Claim 3 (depends on 2) The image sensing device of claim 2, further comprising: a timing controller configured to control operations of the first transfer transistor, the second transfer transistor, the third transfer transistor, and the fourth transfer transistor, wherein the first unit pixel comprises a first select transistor, and the second unit pixel comprises a second select transistor, and wherein, in a full mode, the timing controller activates the first transfer transistor, the second transfer transistor, the third transfer transistor, and the fourth transfer transistor and turns on the first select transistor and the second select transistor so that both the first unit pixel and the second unit pixel are in an activated state. ### Claim 4 (depends on 3) The image sensing device of claim 3, wherein the first unit pixel comprises a first reset transistor, and the second unit pixel comprises a second reset transistor, and wherein the timing controller activate the first reset transistor so that the second unit pixel is in a deactivated state, when an object is detected while both the first unit pixel and the second unit pixel are in an activated state; wherein the timing controller sequentially turns on the second transfer transistor, the third transfer transistor, and the fourth transfer transistor, and sequentially turns on the second select transistor and the second reset transistor so that the first unit pixel is in an activated state. ### Claim 5 (depends on 1) The image sensing device of claim 1, wherein the single transfer transistor is a zeroth transfer transistor. ### Claim 6 (depends on 5) The image sensing device of claim 5, wherein the first unit pixel comprises a first photodiode, a second photodiode, a third photodiode, and a fourth photodiode, and wherein the first photodiode is connected to a first transfer transistor, the second photodiode is connected to a second transfer transistor, the third photodiode is connected to a third transfer transistor, and the fourth photodiode is connected to a fourth transfer transistor. ### Claim 7 (depends on 6) The image sensing device of claim 6, further comprising: a timing controller configured to activate the zeroth transfer transistor, the first transfer transistor, the second transfer transistor, the third transfer transistor, and the fourth transfer transistor, wherein the first unit pixel and the second unit pixel comprise a first select transistor, and wherein, in a full mode, the timing controller activates the zeroth transfer transistor, the first transfer transistor, the second transfer transistor, the third transfer transistor, and the fourth transfer transistor and turns on the first select transistor so that both the first unit pixel and the second unit pixel are in an activated state. ### Claim 8 (depends on 7) The image sensing device of claim 7, wherein the first unit pixel and the second unit pixel comprise a first reset transistor, and wherein the timing controller, when an object is detected while both the first unit pixel and the second unit pixel are in an activated state, maintains the zeroth transfer transistor in a deactivated state so that the second unit pixel is in a deactivated state; sequentially activates the second transfer transistor, the third transfer transistor, and the fourth transfer transistor and sequentially turns on the first select transistor and the first reset transistor so that the first unit pixel is in an activated state. ### Claim 9 (depends on 1) The image sensing device of claim 1, wherein the first unit pixel or the second unit pixel comprises a sawtooth-shaped concavo-convex structure formed on a substrate. ### Claim 10 (depends on 2) The image sensing device of claim 2, comprising: a deep trench isolation layer configured to optically separate the first unit pixel from the second unit pixel, and wherein the deep trench isolation layer is formed between the first unit pixel and the second unit pixel and between regions comprising each photodiode of the first unit pixel. ### Claim 11 (depends on 2) The image sensing device of claim 2, wherein each of the first unit pixel and the second unit pixel comprises a plurality of microlenses formed at a top region of the first unit pixel and the second unit pixel, and wherein a microlens of the first unit pixel has a same width as a microlens of the second unit pixel. ### Claim 12 (depends on 1) The image sensing device of claim 1, wherein the first unit pixel comprises a plurality of microlenses formed at a top region of the first unit pixel, and the second unit pixel comprises a single microlens formed at a top region of the second unit pixel, and wherein a width of the microlens of the second unit pixel is greater than a width of the microlens of the first unit pixel. ### Claim 13 (depends on 1) The image sensing device of claim 1, wherein the second pixel array comprises: a first peripheral pixel array disposed to surround the first pixel array and comprising a plurality of second unit pixels; and a second peripheral pixel array disposed to surround the first peripheral pixel array and comprising a plurality of third unit pixels. ### Claim 14 (depends on 13) The image sensing device of claim 13, each of the plurality of third unit pixels comprises a plurality of photodiodes or a single photodiode. ### Claim 15 An image sensing device, comprising: a plurality of pixel arrays, wherein the pixel arrays comprise: a first pixel array formed in a central region and a corner region and comprising a plurality of first unit pixels; and a second pixel array formed in a region other than the central region and the corner region and comprising a plurality of second unit pixels, wherein the first unit pixel comprises a plurality of photodiodes, wherein an area of the first pixel array is smaller than an area of the second pixel array, wherein the second unit pixel comprises a plurality of photodiodes, and the plurality of photodiodes of the second unit pixel is connected to a single transfer transistor. ### Claim 16 An image sensing device, comprising: a plurality of pixel arrays, wherein the pixel arrays comprise: a first pixel array formed in a region other than a central region and a corner region and comprising a plurality of first unit pixels, and a second pixel array formed in the central region and the corner region and comprising a plurality of second unit pixels, wherein the first unit pixel comprises a plurality of photodiodes, wherein an area of the first pixel array is smaller than an area of the second pixel array, wherein the second unit pixel comprises a plurality of photodiodes, and the plurality of photodiodes of the second unit pixel is connected to a single transfer transistor.