# US 12,765,087 B2 · Image sensing device

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- Number: US 12,765,087 B2
- Document ID: US12765087B2
- Status: Granted
- Kind: B2
- Application number: 17/993,297
- Filed: 2022-11-23
- Published: 2023-08-03
- Granted: 2026-10-13
- Earliest claimed: 2022-01-28
- Assignees: SK hynix Inc.
- Applicants: SK hynix Inc.
- Inventors: Jae Hyung Jang
- Web page: https://patentgrep.com/patent/US12765087B2

## CPC

- H10F 39/8027: {Geometry of the photosensitive area}
- H10F 39/151: {Geometry or disposition of pixel elements, address lines or gate electrodes}
- H10F 39/153: {Two-dimensional or three-dimensional array CCD image sensors}
- H10F 39/199: {Back-illuminated image sensors}
- H10F 39/8023: {Disposition of the elements in pixels, e.g. smaller elements in the centre of the imager compared to larger elements at the periphery}
- H10F 39/8033: {Photosensitive area}
- H10F 39/813: {Electronic components shared by multiple pixels, e.g. one amplifier shared by two pixels}
- H10F 39/80373: {characterised by the gate of the transistor}
- H10F: INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION

## Abstract

An image sensing device includes a substrate including a back side structured to receive incident light and a front side opposite to the back side; imaging pixels to receive the incident light from the back side and each imaging pixel structured to produce photocharge in response to received incident light; a plurality of conductive contact structures configured to generate a potential gradient in the substrate and to capture photocharges that are generated in response to the incident light and move by the potential gradient; and a well region disposed between the plurality of conductive contact structures.

## Claims

### Claim 1

An image sensing device comprising:
a substrate including a back side structured to receive incident light and a front side opposite to the back side;
imaging pixels to receive the incident light from the back side and each imaging pixel structured to produce photocharge in response to received incident light;
a plurality of conductive contact structures configured to generate a potential gradient in the substrate and to capture photocharges that are generated in response to the incident light and move by the potential gradient; and
a well region disposed between the plurality of conductive contact structures,
wherein each conductive contact structure includes:
a control node doped with impurities of a first conductivity type in the substrate;
a detection node doped with impurities of a second conductivity type different from the first conductivity type in the substrate; and
a control gate including a gate electrode and a gate insulation layer for electrically isolating the gate electrode and the substrate from each other,
wherein the well region is doped with impurities of the first conductivity type, and
wherein the well region doped with impurities of the first conductivity type has a smaller doping density than the control node doped with impurities of the first conductivity type.

### Claim 2 (depends on 1)

The image sensing device according to claim 1, wherein:
at least a portion of the well region is disposed to overlap the control gate of each conductive contact structure.

### Claim 3 (depends on 1)

The image sensing device according to claim 1, wherein:
the control node is disposed at one side of the detection node; and
the control gate is disposed at the other side of the detection node.

### Claim 4 (depends on 1)

The image sensing device according to claim 1, wherein:
the control node and the control gate are configured to receive a same demodulation control signal for generating the potential gradient.

### Claim 5 (depends on 4)

The image sensing device according to claim 4, wherein:
the demodulation control signal applied to one of the plurality of conductive contact structures corresponds to an activation voltage; and
the demodulation control signal applied to another one of plurality of the conductive contact structures corresponds to a deactivation voltage.

### Claim 6 (depends on 5)

The image sensing device according to claim 5, wherein:
the well region is configured to receive a well voltage that is smaller than the activation voltage and is greater than the deactivation voltage.

### Claim 7 (depends on 1)

The image sensing device according to claim 1, wherein:
a depth of the control node with respect to the front side is greater than a depth of the detection node with respect to the front side.

### Claim 8 (depends on 1)

The image sensing device according to claim 1, wherein:
a depth of the well region with respect to the front side is smaller than a depth of the control node with respect to the front side.

### Claim 9 (depends on 1)

The image sensing device according to claim 1, wherein:
the detection node is disposed to contact or overlap the control gate.

### Claim 10 (depends on 1)

The image sensing device according to claim 1, wherein:
the detection node is disposed to surround at least a portion of the control node.

### Claim 11 (depends on 1)

The image sensing device according to claim 1, wherein:
the plurality of conductive contact structures includes a first conductive contact structure and a second conductive contact structure that are included in a first pixel among the imaging pixels and receive different demodulation control signals,
wherein
a control node of the first conductive contact structure is disposed at a first vertex of the first pixel, and
a control node of the second conductive contact structure is disposed at a fourth vertex, and
wherein the first vertex and the fourth vertex are located along a diagonal direction of the first pixel.

### Claim 12 (depends on 11)

The image sensing device according to claim 11, wherein:
a control node, a detection node, and a control gate of each of the first conductive contact structure and the second conductive contact structure are sequentially arranged toward a center point of the first pixel in the diagonal direction.

### Claim 13 (depends on 11)

The image sensing device according to claim 11, wherein:
the control gate of each of the first conductive contact structure and the second conductive contact structure is disposed in a planar shape on the front side.

### Claim 14 (depends on 11)

The image sensing device according to claim 11, wherein the imaging pixels further include second to fourth pixels adjacent to the first pixel form a (2×2) matrix and share the control node disposed at the fourth vertex of the first pixel.

### Claim 15

An image sensing device comprising:
a substrate including a back side structured to receive incident light and a front side opposite to the back side;
an imaging pixel to receive the incident light from the back side and structured to produce photocharge in response to the received incident light;
a plurality of taps, each tap configured to generate a potential gradient in the substrate and to capture photocharges that are generated in response to the incident light and move by the potential gradient; and
a well region disposed between the plurality of taps such that at least a portion of the well region overlaps with each of the plurality of taps,
wherein each of the plurality of taps includes:
a control node doped with impurities of a first conductivity type in the substrate;
a detection node doped with impurities of a second conductivity type different from the first conductivity type in the substrate; and
a control gate formed to include a gate electrode and a gate insulation layer for electrically isolating the gate electrode and the substrate from each other,
wherein
the control node, the detection node, and the control gate of a tap are sequentially arranged in a diagonal direction of a first pixel including the tap, and
wherein the plurality of taps includes a first tap and a second tap that are included in the first pixel among the imaging pixels and receive different demodulation control signals.

### Claim 16 (depends on 15)

The image sensing device of claim 15, wherein the well region has a portion overlapping the control gate of each tap.

### Claim 17

An image sensing device comprising:
a substrate including a back side structured to receive incident light and a front side opposite to the back side;
a plurality of taps, each tap is configured to generate a potential gradient in the substrate and to capture photocharges that are generated in response to the incident light and move by the potential gradient; and
a well region disposed between the plurality of taps,
wherein each of the plurality of taps includes:
a control node doped with impurities of a first conductivity type in the substrate;
a detection node doped with impurities of a second conductivity type different from the first conductivity type in the substrate; and
a control gate formed to include a gate electrode and a gate insulation layer for electrically isolating the gate electrode and the substrate from each other,
wherein
a depth of the well region from the front side is smaller than a depth of the control node from the front side,
wherein the well region is doped with impurities of the first conductivity type, and
wherein the well region doped with impurities of the first conductivity type has a smaller doping density than the control node doped with impurities of the first conductivity type.

### Claim 18 (depends on 17)

The image sensing device of claim 17, wherein the well region has a portion overlapping the control gate of each tap.