# US 12,765,086 B2 · Pixel array and image sensor including the same

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- Number: US 12,765,086 B2
- Document ID: US12765086B2
- Status: Granted
- Kind: B2
- Application number: 19/060,920
- Filed: 2025-02-24
- Published: 2025-07-03
- Granted: 2026-10-13
- Earliest claimed: 2021-06-10
- Assignees: Samsung Electronics Co., Ltd.
- Applicants: Samsung Electronics Co., Ltd.
- Inventors: Jeongjin Cho; Kwanhee Lee
- Web page: https://patentgrep.com/patent/US12765086B2

## CPC

- H10F 39/802: {Geometry or disposition of elements in pixels, e.g. address-lines or gate electrodes}
- H04N 25/75: Circuitry for providing, modifying or processing image signals from the pixel array
- H04N 25/772: comprising A/D, V/T, V/F, I/T or I/F converters
- H04N 25/78: Readout circuits for addressed sensors, e.g. output amplifiers or A/D converters
- H10F 39/8053: {Colour filters}
- H10F 39/8063: {Microlenses}
- H10F 39/811: {Interconnections}
- H10F: INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H04N: PICTORIAL COMMUNICATION, e.g. TELEVISION

## Abstract

A pixel array and an image sensor including the pixel array are provided. The pixel array included in the image sensor includes a plurality of pixels arranged in a matrix, and a plurality of column lines each commonly connected to pixels arranged on a same column from among the plurality of pixels. Each of the plurality of pixels includes four subpixels. Each of the four subpixels includes four photoelectric conversion devices; a floating diffusion region storing electric charges generated by the four photoelectric conversion devices; and four transmission gates configured to transmit the electric charges generated by the four photoelectric conversion devices to the floating diffusion region. Four floating diffusion regions included in the four subpixels are electrically connected to one another via internal wiring. Each of the plurality of pixels further includes a reset gate, a first driving gate and a first selection gate.

## Claims

### Claim 1

An image sensor comprising:
a substrate comprising a first surface and a second surface opposite the first surface;
a first pixel comprising first-four photoelectric conversion devices (PDs) and a first floating diffusion (FD) region shared by the first-four PDs in the substrate;
a second pixel comprising second-four PDs and a second FD region shared by the second-four PDs in the substrate;
a third pixel comprising third-four PDs and a third FD region shared by the third-four PDs in the substrate;
a fourth pixel comprising fourth-four PDs and a fourth FD region shared by the fourth-four PDs in the substrate;
a reset transistor configured to connect to a pixel power supply voltage; and
a gain control transistor configured to connect to the reset transistor,
wherein the first FD region is connected to the fourth FD region through a first wiring,
wherein the second FD region is connected to the third FD region through a second wiring,
wherein each of the first-four PDs to the fourth-four PDs are arranged in a 2×2 matrix, and
wherein the reset transistor is configured to provide the pixel power supply voltage to the first to fourth FD regions.

### Claim 2 (depends on 1)

The image sensor of claim 1, further comprising:
a first driving transistor configured to connect to the first-four PDs and the fourth-four PDs; and
a second driving transistor configured to connect to the second-four PDs and the third-four PDs.

### Claim 3 (depends on 1)

The image sensor of claim 1, wherein the first pixel is connected to the second pixel through a third wiring.

### Claim 4 (depends on 3)

The image sensor of claim 3, further comprising:
a first via contact vertically arranged with the first FD region; and
a second via contact vertically arranged with the fourth FD region,
wherein the first FD region is directly connected to the fourth FD region through the first via contact, the first wiring, and the second via contact.

### Claim 5 (depends on 4)

The image sensor of claim 4, wherein the first via contact, the first wiring, and the second via contact are sequentially arranged in a first direction in a plan view.

### Claim 6 (depends on 1)

The image sensor of claim 1, wherein each of the first and second wirings extends in a first direction and a third wiring extends in a second direction perpendicular to the first direction.

### Claim 7 (depends on 6)

The image sensor of claim 6, wherein the first wiring is connected to the second wiring through the third wiring.

### Claim 8 (depends on 7)

The image sensor of claim 7, wherein the second pixel is disposed directly adjacent to the first pixel in the second direction.

### Claim 9 (depends on 6)

The image sensor of claim 6, wherein each of the first to fourth pixels comprises four microlens.

### Claim 10 (depends on 6)

The image sensor of claim 6, further comprising:
a first color filter on the first-four PDs;
a second color filter on the second-four PDs;
a third color filter on the third-four PDs; and
a fourth color filter on the fourth-four PDs.

### Claim 11

An image sensor comprising:
a substrate comprising a first surface and a second surface opposite the first surface; and
a pixel array arranged in a N×M matrix comprising:
sixteen photoelectric conversion devices (PDs) in the substrate;
four floating diffusion (FDs) regions comprising a first FD region, a second FD region, a third FD region, and a fourth FD region;
a reset transistor configured to connect to a pixel power supply voltage; and
a gain control transistor configured to connect to the reset transistor,
wherein the reset transistor is configured to provide the pixel power supply voltage to the first to fourth FD regions, and
wherein each of the first to fourth FD regions is shared by four PDs of the sixteen PDs.

### Claim 12 (depends on 11)

The image sensor of claim 11, wherein the first to fourth FD regions are connected to each other.

### Claim 13 (depends on 12)

The image sensor of claim 12, wherein the first to fourth FD regions are connected to each other through wirings.

### Claim 14 (depends on 11)

The image sensor of claim 11, wherein N is 4 and M is 4.

### Claim 15 (depends on 14)

The image sensor of claim 14, wherein each of the first to fourth FD regions is shared by pixels arranged in a 2×2 matrix.

### Claim 16 (depends on 11)

The image sensor of claim 11, wherein N is 2 and M is 8.

### Claim 17

An image sensor comprising:
a substrate comprising a first surface and a second surface opposite the first surface;
a first pixel comprising first-four photoelectric conversion devices (PDs) and a first floating diffusion (FD) region shared by the first-four PDs in the substrate;
a second pixel comprising second-four PDs and a second FD region shared by the second-four PDs in the substrate;
a third pixel comprising third-four PDs and a third FD region shared by the third-four PDs in the substrate;
a fourth pixel comprising fourth-four PDs and a fourth FD region shared by the fourth-four PDs in the substrate;
a reset transistor configured to connect to a pixel power supply voltage;
a gain control transistor configured to connect to the reset transistor;
a first driving transistor configured to connect to the first-four PDs and the fourth-four PDs; and
a second driving transistor configured to connect to the second-four PDs and the third-four PDs,
wherein the first FD region is connected to the fourth FD region,
wherein the second FD region is connected to the third FD region,
wherein each of the first-four PDs to the fourth-four PDs are arranged in a 2×2 matrix, and
wherein the reset transistor is configured to provide the pixel power supply voltage to the first to fourth FD regions.

### Claim 18 (depends on 17)

The image sensor of claim 17, wherein the first to fourth FD regions are connected to each other.

### Claim 19 (depends on 17)

The image sensor of claim 17, wherein the second pixel is disposed directly adjacent to the first pixel in a first direction and the fourth pixel is disposed directly adjacent to the first pixel in a second direction perpendicular to the first direction.