# US 12,765,084 B2 · Backside illuminated image sensor

> Agents: this data is available as JSON from the patentgrep API and MCP server — see https://patentgrep.com/llms.txt

- Number: US 12,765,084 B2
- Document ID: US12765084B2
- Status: Granted
- Kind: B2
- Application number: 18/137,358
- Filed: 2023-04-20
- Published: 2024-07-04
- Granted: 2026-10-13
- Earliest claimed: 2023-01-04
- Assignees: DB HiTek Co., Ltd.
- Applicants: Db Hitek Co., Ltd.
- Inventors: Chang Hun Han; Man Lyun Ha; Tae Wook Kang
- Web page: https://patentgrep.com/patent/US12765084B2

## CPC

- H10F 39/199: {Back-illuminated image sensors}
- H10F 39/8057: {Optical shielding}
- H10F 39/811: {Interconnections}
- H10F: INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION

## Abstract

A backside illuminated image sensor includes a substrate having a frontside surface and a backside surface, pixel regions formed in the substrate, light isolation patterns formed among the pixel regions, first bonding pads electrically connected to the pixel regions, and at least one second bonding pad electrically connected to the light isolation patterns.

## Claims

### Claim 1

A backside illuminated image sensor comprising:
a substrate having a frontside surface and a backside surface;
pixel regions formed in the substrate;
light isolation patterns formed among the pixel regions and interconnected to surround the pixel regions;
first bonding pads electrically connected to the pixel regions; and
a light blocking pattern formed along the backside surface of the substrate, the light blocking pattern being made of a same material as the light isolation patterns and integrally connected with the light isolation patterns, wherein the light blocking pattern is not in contact with the first bonding pads; and
at least one second bonding pad directly contacting the light blocking pattern, electrically connected to the light isolation patterns through the light blocking pattern, and configured to apply a negative voltage to the light isolation patterns through the light blocking pattern,
wherein the at least one second bonding pad is not in direct contact with the light isolation patterns.

### Claim 2 (depends on 1)

The backside illuminated image sensor of claim 1, wherein the substrate has trenches formed among the pixel regions from the backside surface of the substrate toward the frontside surface of the substrate, and the light isolation patterns are formed in the trenches.

### Claim 3 (depends on 2)

The backside illuminated image sensor of claim 2, wherein the trenches are connected with one another and arranged in a lattice form.

### Claim 4 (depends on 3)

The backside illuminated image sensor of claim 3, wherein the light isolation patterns are connected with one another and arranged in a lattice form.

### Claim 5 (depends on 2)

The backside illuminated image sensor of claim 2, further comprising:
an anti-reflective layer formed on the backside surface of the substrate and inner surfaces of the trenches.

### Claim 6 (depends on 1)

The backside illuminated image sensor of claim 1, further comprising:
an insulating layer formed on the frontside surface of the substrate; and
electrode pads formed on the insulating layer and electrically connected to the pixel regions,
wherein the first bonding pads are connected to the electrode pads through via holes penetrating the substrate and the insulating layer.

### Claim 7 (depends on 6)

The backside illuminated image sensor of claim 6, further comprising:
an anti-reflective layer formed on the backside surface of the substrate; and
a backside insulating layer formed on the anti-reflective layer, inner side surfaces of the via holes and surface portions of the electrode pads exposed by the via holes,
wherein the first bonding pads are formed on the backside insulating layer and connected to the electrode pads through the backside insulating layer.