Solid-state imaging device and method of manufacturing solid-state imaging device

A solid-state imaging device, comprising:

• a first semiconductor layer having a pixel region and a peripheral region, the pixel region in which a plurality of pixels is arranged, and the peripheral region provided around the pixel region;
• a second semiconductor layer stacked on the first semiconductor layer on side opposite to light incident side of the pixels, the second semiconductor layer being provided with a pixel circuit coupled to the pixels;
• an external terminal provided in an opening that communicates with the second semiconductor layer from the peripheral region in the first semiconductor layer;
• a first isolator provided in the first semiconductor layer within the peripheral region, the first isolator surrounding at least a portion of an outer periphery of the opening;
• and
• a second isolator provided in the second semiconductor layer within a region corresponding to the peripheral region, the second isolator surrounding at least a portion of the outer periphery of the opening.