Methods for forming trench capacitor cells including forming a blocking structure in a portion of a trench prior to forming first capacitor and second capacitor on either sides and directly contacting the blocking structure

A method, comprising:

• forming a trench extending into a substrate, wherein in a top view, the trench extends lengthwise along a first direction;
• forming a material layer over the substrate and intersecting a first portion of the trench;
• after the forming of the material layer, forming a first capacitor intersecting a second portion of the trench, the first capacitor comprising a first plurality of conductor plates;
• and
• forming a second capacitor intersecting a third portion of the trench, the second capacitor comprising a second plurality of conductor plates,
• wherein the first plurality of conductor plates and the second plurality of conductor plates are in direct contact with the material layer.

A method, comprising:

• forming a trench extending into a substrate and extending lengthwise along a first direction, the substrate comprising a first region, a second region and a third region, the second region being disposed between the first region and the third region along the first direction;
• forming a material layer over the second region of the substrate;
• after the forming of material layer, forming a first capacitor over the first region of the substrate and a second capacitor over the third region of the substrate, wherein the first capacitor is spaced apart from the second capacitor by the material layer;
• and
• forming a passivation structure over the substrate.