Semiconductor structure with silicon-on-insulator substrate and the manufacturing method thereof
AssigneeUnited Microelectronics Corp.
InventorsYueran Qiao, Yi Liu, Guohai Zhang, Genmao Liu, Lei Zhu
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Abstract
The invention provides a semiconductor structure comprising a silicon-on-insulator (SOI) substrate, which comprises a silicon layer and an insulating layer stacked from bottom to top, a phosphosilicate glass (PGS) on the insulating layer, and a fluorosilicate glass (FSG) on the phosphosilicate glass. The probability of ions infiltrating into the transistor can be reduced and the yield of products can be improved.
Claims17
A semiconductor structure comprising a silicon-on-insulator (SOI) substrate, comprising:
- a silicon-on-insulator substrate, which comprises a silicon layer and an insulating layer stacked from bottom to top, wherein the insulating layer comprises a silicon oxide layer and a silicon oxynitride layer stacked from bottom to top;
- a phosphosilicate glass (PGS) located on the insulating layer;
- and
- a fluorosilicate glass (FSG) located on the phosphosilicate glass.
A method for forming a semiconductor structure including a silicon-on-insulator (SOI) substrate, comprising:
- providing a silicon-on-insulator substrate, wherein the silicon-on-insulator substrate comprises a silicon layer and an insulating layer stacked from bottom to top, wherein the insulating layer comprises a silicon oxide layer and a silicon oxynitride layer stacked from bottom to top;
- forming a phosphosilicate glass (PGS) on the insulating layer;
- and
- forming a fluorosilicate glass (FSG) on the phosphosilicate glass.
Dependencies are inferred from the claim text.