NFET and PFET with different fin numbers in FinFET based CFET
AssigneeTaiwan Semiconductor Manufacturing Company, Ltd.
InventorsCheng-Ting Chung, Jin Cai, Szuya Liao
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Abstract
A method includes forming a complementary Field-Effect Transistor (CFET) including a first FinFET and a second FinFET. The processes for forming the first FinFET includes forming at least one semiconductor fin having a first total count, and forming a first gate stack on the at least one semiconductor fin. The second FinFET is vertically aligned to the first FinFET. The processes for forming the second FinFET includes forming a plurality of semiconductor fins, wherein the plurality of semiconductor fins have a second total count greater than the first total count, and forming a second gate stack on the plurality of semiconductor fins.
Claims20
A method comprising:
- forming a complementary Field-Effect Transistor (CFET) comprising:
- forming a first FinFET comprising:
- forming at least one semiconductor fin having a first total count, wherein the forming the at least one semiconductor fin comprises performing a bottom fin-cut process to remove a fin in a first plurality of semiconductor fins and to leave the at least one semiconductor fin;
- and
- forming a first gate stack on the at least one semiconductor fin;
- and
- forming a second FinFET vertically aligned to and overlapping the first FinFET, the forming the second FinFET comprising:
- forming a second plurality of semiconductor fins, wherein the second plurality of semiconductor fins have a second total count greater than the first total count;
- and
- forming a second gate stack on the second plurality of semiconductor fins.
A structure comprising:
- a first FinFET comprising:
- at least one semiconductor fin having a first total count;
- a dielectric fin;
- and
- a first gate stack on the at least one semiconductor fin;
- and
- a second FinFET vertically aligned to, and overlapping, the first FinFET, the second FinFET comprising:
- a plurality of semiconductor fins, wherein the plurality of semiconductor fins have a second total count greater than the first total count, wherein the dielectric fin is overlapped by a semiconductor fin in the plurality of semiconductor fins;
- and
- a second gate stack on the plurality of semiconductor fins.
A structure comprising:
- a lower FinFET comprising:
- at least one semiconductor fin;
- a dielectric fin;
- a first gate dielectric on the at least one semiconductor fin;
- and
- a first gate electrode on the first gate dielectric, wherein the first gate electrode comprises portions on opposite sides of the at least one semiconductor fin and the dielectric fin;
- and
- an upper FinFET comprising:
- a plurality of semiconductor fins overlapping the at least one semiconductor fin;
- an additional semiconductor fin overlapping the dielectric fin;
- a second gate dielectric on the plurality of semiconductor fins;
- and
- a second gate electrode on the second gate dielectric, wherein the second gate electrode comprises portions on opposite sides of the plurality of semiconductor fins and the additional semiconductor fin.
Dependencies are inferred from the claim text.