# US 12,765,045 B2 · Semiconductor device including temperature sensing diode

> Agents: this data is available as JSON from the patentgrep API and MCP server — see https://patentgrep.com/llms.txt

- Number: US 12,765,045 B2
- Document ID: US12765045B2
- Status: Granted
- Kind: B2
- Application number: 18/465,997
- Filed: 2023-09-13
- Published: 2023-12-28
- Granted: 2026-10-13
- Earliest claimed: 2021-03-17
- Assignees: Rohm Co., Ltd.
- Applicants: Rohm Co., Ltd.
- Inventors: Takayuki Osawa
- Web page: https://patentgrep.com/patent/US12765045B2

## CPC

- H10D 84/617: {Combinations of vertical BJTs and only diodes}
- H10D 8/411: {PN diodes having planar bodies}
- H10D 12/441: {Vertical IGBTs}
- H10D 62/124: {Shapes, relative sizes or dispositions of the regions of semiconductor bodies or of junctions between the regions}
- H10D 84/143: {the built-in components being PN junction diodes}
- H10D: INORGANIC ELECTRIC SEMICONDUCTOR DEVICES

## Abstract

This semiconductor device is provided with: a semiconductor layer; an insulating film which is formed on the surface of the semiconductor layer; a main cell region which comprises a main cell, while being provided in the semiconductor layer; and a temperature-sensing diode for sensing the temperature, the diode being provided in a region other than the main cell region. The temperature-sensing diode comprises a diode cell which is composed of: a first semiconductor region of a first conductivity type; and a second semiconductor region of a second conductivity type. The second semiconductor region is formed into a ring shape so as to surround the first semiconductor region. The inner lateral surface of the second semiconductor region is joined with the first semiconductor region.

## Claims

### Claim 1

A semiconductor device, comprising:
a semiconductor layer;
an insulation film formed on a surface of the semiconductor layer;
a main cell region including a main cell disposed on the semiconductor layer; and
a temperature sensing diode disposed in a region different from the main cell region and configured to detect a temperature, wherein
the temperature sensing diode includes a diode cell including a first semiconductor region of a first conductive type formed as a thin film on a surface of the insulation film and a second semiconductor region of a second conductive type formed as a thin film on the surface of the insulation film,
the second semiconductor region annularly surrounds the first semiconductor region,
the second semiconductor region includes an inner surface joined to the first semiconductor region,
the temperature sensing diode includes multiple diode cells arranged in one direction and connected in series to each other,
the multiple diode cells include a first diode cell and a second diode cell that are adjacent to each other in an arrangement direction of the multiple diode cells,
the semiconductor device further comprises:
an intermediate insulation film covering the temperature sensing diode;
a first interconnect formed on a surface of the intermediate insulation film and connected to the first semiconductor region of the first diode cell; and
a second interconnect formed on the surface of the intermediate insulation film and insulated from the first interconnect,
the second interconnect electrically connects the second semiconductor region of the first diode cell and the first semiconductor region of the second diode cell,
the temperature sensing diode is mounted on a diode mount,
a first interconnect lead region and a second interconnect lead region are disposed on opposite end portions of the diode mount in the arrangement direction,
the multiple diode cells include a first end cell and a second end cell disposed at opposite ends in the arrangement direction,
the first end cell is disposed toward the second interconnect lead region,
the second end cell is disposed toward the first interconnect lead region,
the semiconductor device further comprises:
a first end interconnect formed on a surface of the intermediate insulation film, the first end interconnect including a first end connector disposed to overlap the first semiconductor region of the first end cell and a first end extension extending from the first end connector to an outside of the first semiconductor region of the first end cell as viewed in the thickness-wise direction of the semiconductor layer, the first end extension including a first electrode of the temperature sensing diode;
a first connection line connected to the first end extension and extending through the first interconnect lead region;
a second end interconnect formed on the surface of the intermediate insulation film, the second end interconnect including a second end connector disposed to overlap the first semiconductor region of the second end cell and a second end extension extending from the second end connector to an outside of the first semiconductor region of the second end cell as viewed in the thickness-wise direction of the semiconductor layer, the second end extension including a second electrode of the temperature sensing diode; and
a second connection line connected to the second end extension and extending through the second interconnect lead region.

### Claim 2 (depends on 1)

The semiconductor device according to claim 1, wherein
the first semiconductor region is circular as viewed in a thickness-wise direction of the semiconductor layer, and
the second semiconductor region includes
an inner circumferential surface joined to a circumferential surface of the first semiconductor region along an entire perimeter of the circumferential surface of the first semiconductor region, and
an outer surface being quadrangular as viewed in the thickness-wise direction of the semiconductor layer.

### Claim 3 (depends on 1)

The semiconductor device according to claim 1, further comprising:
a first through interconnect extending through the intermediate insulation film and connecting the first interconnect and the first semiconductor region; and
a second through interconnect extending through the intermediate insulation film and connecting the second interconnect and the second semiconductor region.

### Claim 4 (depends on 3)

The semiconductor device according to claim 3, wherein
as viewed in the thickness-wise direction of the semiconductor layer, the first interconnect includes a first region connector disposed to overlap the first semiconductor region and a first extension extending from the first region connector toward an outside of the first semiconductor region, and
as viewed in the thickness-wise direction of the semiconductor layer, the second interconnect includes a second region connector disposed to overlap the second semiconductor region and a second extension extending from the second region connector toward an outside of the second semiconductor region.

### Claim 5 (depends on 4)

The semiconductor device according to claim 4, wherein as viewed in the thickness-wise direction of the semiconductor layer, the second region connector annularly surrounds a portion of the first region connector and includes a gap to avoid contacting the first extension.

### Claim 6 (depends on 1)

The semiconductor device according to claim 1, wherein
the second interconnect includes
a first part disposed to overlap the second semiconductor region of the first diode cell as viewed in the thickness-wise direction of the semiconductor layer and electrically connected to the second semiconductor region of the first diode cell,
a second part disposed to overlap the first semiconductor region of the second diode cell as viewed in the thickness-wise direction of the semiconductor layer and electrically connected to the first semiconductor region of the second diode cell, and
a connection part that connects the first part and the second part.

### Claim 7 (depends on 1)

The semiconductor device according to claim 1, wherein
the second diode cell includes a third semiconductor region of the first conductive type formed as a thin film on the surface of the insulation film and a fourth semiconductor region of the second conductive type formed as a thin film on the surface of the insulation film,
the third semiconductor region annularly surrounds the second semiconductor region and includes an inner surface joined to an outer surface of the second semiconductor region, and
the fourth semiconductor region annularly surrounds the third semiconductor region and includes an inner surface joined to an outer surface of the third semiconductor region.

### Claim 8 (depends on 7)

The semiconductor device according to claim 7, further comprising:
a third interconnect formed on the surface of the intermediate insulation film to overlap the fourth semiconductor region;
a first through interconnect extending through the intermediate insulation film and connecting the first interconnect and the first semiconductor region;
a second through interconnect extending through the intermediate insulation film and connecting the second interconnect and the second semiconductor region;
a third through interconnect extending through the intermediate insulation film and connecting the second interconnect and the third semiconductor region; and
a fourth through interconnect extending through the intermediate insulation film and connecting the third interconnect and the fourth semiconductor region, wherein
the first interconnect overlaps the first semiconductor region, and
the second interconnect overlaps with the second semiconductor region and the third semiconductor region.

### Claim 9 (depends on 8)

The semiconductor device according to claim 8, wherein
the first interconnect includes a first region connector and a first extension,
as viewed in the thickness-wise direction of the semiconductor layer, the first region connector is disposed to overlap the first semiconductor region and connected to the first through interconnect,
the first extension extends from the first region connector toward an outside of the first semiconductor region,
as viewed in the thickness-wise direction of the semiconductor layer, the second interconnect annularly surrounds a portion of the first region connector and includes a gap to avoid contacting the first extension, and
as viewed in the thickness-wise direction of the semiconductor layer, the third interconnect is separated radially outward from the second interconnect and includes a gap to avoid contacting the first extension.

### Claim 10 (depends on 7)

The semiconductor device according to claim 7, wherein
the first semiconductor region is circular as viewed in a thickness-wise direction of the semiconductor layer,
the second semiconductor region is annular and includes an inner circumferential surface joined to a circumferential surface of the first semiconductor region along an entire perimeter of the circumferential surface of the first semiconductor region,
the third semiconductor region annularly surrounds the second semiconductor region and includes an inner circumferential surface joined to an outer circumferential surface of the second semiconductor region along an entire perimeter of the outer circumferential surface of the second semiconductor region,
the fourth semiconductor region annularly surrounds the third semiconductor region and includes an inner circumferential surface joined to an outer circumferential surface of the third semiconductor region along an entire perimeter of the outer circumferential surface of the third semiconductor region, and
as viewed in the thickness-wise direction of the semiconductor layer, the first semiconductor region, the second semiconductor region, the third semiconductor region, and the fourth semiconductor region are concentric with each other.

### Claim 11 (depends on 1)

The semiconductor device according to claim 1, further comprising:
a protection diode connected in antiparallel to the temperature sensing diode.

### Claim 12

A semiconductor device, comprising:
a semiconductor layer;
an insulation film formed on a surface of the semiconductor layer;
a main cell region including a main cell disposed on the semiconductor layer; and
a temperature sensing diode disposed in a region different from the main cell region and configured to detect a temperature, wherein
the temperature sensing diode includes a diode cell including a first semiconductor region of a first conductive type formed as a thin film on a surface of the insulation film and a second semiconductor region of a second conductive type formed as a thin film on the surface of the insulation film,
the second semiconductor region annularly surrounds the first semiconductor region,
the second semiconductor region includes an inner surface joined to the first semiconductor region,
the temperature sensing diode includes multiple diode cells arranged in one direction and connected in series to each other,
the multiple diode cells include a first diode cell and a second diode cell that are adjacent to each other in an arrangement direction of the multiple diode cells,
the semiconductor device further comprises:
an intermediate insulation film covering the temperature sensing diode;
a first interconnect formed on a surface of the intermediate insulation film and connected to the first semiconductor region of the first diode cell; and
a second interconnect formed on the surface of the intermediate insulation film and insulated from the first interconnect,
the second interconnect electrically connects the second semiconductor region of the first diode cell and the first semiconductor region of the second diode cell,
the second interconnect includes
a first part disposed to overlap the second semiconductor region of the first diode cell as viewed in the thickness-wise direction of the semiconductor layer and electrically connected to the second semiconductor region of the first diode cell,
a second part disposed to overlap the first semiconductor region of the second diode cell as viewed in the thickness-wise direction of the semiconductor layer and electrically connected to the first semiconductor region of the second diode cell, and
a connection part that connects the first part and the second part.

### Claim 13 (depends on 12)

The semiconductor device according to claim 12, wherein
the first semiconductor region is circular as viewed in a thickness-wise direction of the semiconductor layer, and
the second semiconductor region includes
an inner circumferential surface joined to a circumferential surface of the first semiconductor region along an entire perimeter of the circumferential surface of the first semiconductor region, and
an outer surface being quadrangular as viewed in the thickness-wise direction of the semiconductor layer.

### Claim 14 (depends on 12)

The semiconductor device according to claim 12, further comprising:
a first through interconnect extending through the intermediate insulation film and connecting the first interconnect and the first semiconductor region; and
a second through interconnect extending through the intermediate insulation film and connecting the second interconnect and the second semiconductor region.

### Claim 15 (depends on 14)

The semiconductor device according to claim 14, wherein
as viewed in the thickness-wise direction of the semiconductor layer, the first interconnect includes a first region connector disposed to overlap the first semiconductor region and a first extension extending from the first region connector toward an outside of the first semiconductor region, and
as viewed in the thickness-wise direction of the semiconductor layer, the second interconnect includes a second region connector disposed to overlap the second semiconductor region and a second extension extending from the second region connector toward an outside of the second semiconductor region.

### Claim 16 (depends on 15)

The semiconductor device according to claim 15, wherein as viewed in the thickness-wise direction of the semiconductor layer, the second region connector annularly surrounds a portion of the first region connector and includes a gap to avoid contacting the first extension.

### Claim 17

A semiconductor device, comprising:
a semiconductor layer;
an insulation film formed on a surface of the semiconductor layer;
a main cell region including a main cell disposed on the semiconductor layer; and
a temperature sensing diode disposed in a region different from the main cell region and configured to detect a temperature, wherein
the temperature sensing diode includes a diode cell including a first semiconductor region of a first conductive type formed as a thin film on a surface of the insulation film and a second semiconductor region of a second conductive type formed as a thin film on the surface of the insulation film,
the second semiconductor region annularly surrounds the first semiconductor region,
the second semiconductor region includes an inner surface joined to the first semiconductor region
the semiconductor device further comprises:
an intermediate insulation film covering the temperature sensing diode;
a first interconnect and a second interconnect formed on a surface of the intermediate insulation film;
a first through interconnect extending through the intermediate insulation film and connecting the first interconnect and the first semiconductor region; and
a second through interconnect extending through the intermediate insulation film and connecting the second interconnect and the second semiconductor region,
as viewed in the thickness-wise direction of the semiconductor layer, the first interconnect includes a first region connector disposed to overlap the first semiconductor region and a first extension extending from the first region connector toward an outside of the first semiconductor region, and
as viewed in the thickness-wise direction of the semiconductor layer, the second interconnect includes a second region connector disposed to overlap the second semiconductor region and a second extension extending from the second region connector toward an outside of the second semiconductor region.

### Claim 18 (depends on 17)

The semiconductor device according to claim 17, wherein as viewed in the thickness-wise direction of the semiconductor layer, the second region connector annularly surrounds a portion of the first region connector and includes a gap to avoid contacting the first extension.

### Claim 19 (depends on 17)

The semiconductor device according to claim 17, wherein the temperature sensing diode includes multiple diode cells arranged in one direction and connected in series to each other.

### Claim 20 (depends on 19)

The semiconductor device according to claim 19, wherein
the multiple diode cells include a first diode cell and a second diode cell that are adjacent to each other in an arrangement direction of the multiple diode cells,
the first interconnect is connected to the first semiconductor region of the first diode cell,
the second interconnect is insulated from the first interconnect, and
the second interconnect electrically connects the second semiconductor region of the first diode cell and the first semiconductor region of the second diode cell.