Semiconductor package with redistribution substrate having embedded passive device

A method of fabricating a semiconductor package, comprising:

• forming a passive device on a carrier substrate, wherein the passive device comprises a
• first terminal on the carrier substrate, a second terminal on the first terminal, and a stack structure between the first terminal and the second terminal;
• forming, on the carrier substrate, a first dielectric layer covering a top surface and sidewalls of the passive device and a top surface of the carrier substrate, wherein the first dielectric layer has undulation at a top surface thereof over the passive device;
• forming, on the first dielectric layer, a first redistribution pattern beside the passive device and a second redistribution pattern over the passive device, wherein, on the top surface of the carrier substrate, the first redistribution pattern is at a higher level than the second redistribution pattern;
• forming, on the first dielectric layer, a second dielectric layer covering the first and second redistribution patterns, wherein a top surface of the second dielectric layer is substantially flat;
• forming on the second dielectric layer a third redistribution pattern;
• and
• removing the carrier substrate.

A method of fabricating a semiconductor package, comprising:

• forming a passive device on a carrier substrate;
• forming a first redistribution pattern on the carrier substrate which is laterally spaced apart from the passive device without being connected to the passive device;
• forming, on the carrier substrate, a first dielectric layer covering the first redistribution pattern and the passive device, wherein, on a top surface of the carrier substrate, a top surface of the passive device is at a higher level than a top surface of the first redistribution pattern;
• forming, on the first dielectric layer a second redistribution pattern penetrating the first dielectric layer to connect with the first redistribution pattern and the passive device, wherein the first dielectric layer has undulation at the top surface thereof over the passive device;
• forming, on the first dielectric layer, a second dielectric layer covering the second redistribution pattern;
• forming, on the second dielectric layer, a third redistribution pattern;
• removing the carrier substrate;
• forming a third dielectric layer on a bottom surface of the first dielectric layer;
• forming, on a bottom surface of the third dielectric layer, a fourth redistribution pattern penetrating the third dielectric layer to connect with the first redistribution pattern and the passive device;
• mounting a semiconductor chip on the fourth redistribution pattern,
• wherein a thickness of the passive device is about 0.1% to about 50% of an interval between a bottom of the third dielectric layer and a top surface of the second dielectric layer.