Ferroelectric capacitive memory devices with a multiple-work-function electrode

A method of forming a structure for a ferroelectric capacitive memory device, the method comprising:

• forming a ferroelectric layer on a semiconductor layer, wherein a dielectric layer is positioned between the semiconductor layer and a semiconductor substrate, and the semiconductor substrate includes a back gate;
• forming a first electrode that includes a first doped region in the semiconductor layer and a second doped region in the semiconductor layer;
• forming a second electrode that includes a first section and a second section on the ferroelectric layer, wherein the first section of the second electrode comprises a first material with a first work function, and the second section of the second electrode comprises a second material with a second work function that is greater than the first work function of the first material;
• and
• forming a first interconnection that is configured to connect the first doped region to the second doped region.