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US 12,765,038 B2Granted
Semiconductor device and fabricating method thereof
AssigneeNanya Technology Corporation
InventorYu Hua Liu
Life of this patent
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Abstract
A semiconductor device includes a semiconductor substrate and a gate structure. The semiconductor substrate has source/drain regions and a channel region between the source/drain regions. The gate structure is over the channel region of the semiconductor substrate. The gate structure includes an interfacial layer, a zirconium-containing dielectric layer, and a gate electrode. The zirconium-containing dielectric layer is over the interfacial layer and is in tetragonal-phase. The gate electrode is over the zirconium-containing dielectric layer.
Claims14
A fabricating method of a semiconductor device, comprising:
- forming a gate structure over a channel region of a semiconductor substrate, wherein forming the gate structure comprises:
- depositing an interfacial layer over the channel region;
- depositing a zirconium-containing dielectric layer on the interfacial layer, wherein the zirconium-containing dielectric layer is in tetragonal-phase;
- and
- forming a gate electrode over the zirconium-containing dielectric layer;
- performing an implantation process to the zirconium-containing dielectric layer with nitrogen, wherein the zirconium-containing dielectric layer has a top portion and a bottom portion opposing each other, and the bottom portion is in contact with the interfacial layer, wherein the implantation process is performed such that a nitrogen atomic concentration at the top portion is higher than a nitrogen atomic concentration at the bottom portion;
- and
- forming source/drain regions in the semiconductor substrate and on opposite sides of the channel region.
5 more elements
Dependencies are inferred from the claim text.