Semiconductor device and method for manufacturing semiconductor device
AssigneeMitsubishi Electric Corporation
InventorHiroyuki Okazaki
Life of this patent
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Abstract
An object of the technique disclosed in the Description is to provide a semiconductor device that reduces a gate leakage current without degrading its high-frequency characteristic. A semiconductor device relating to the technique disclosed in the Description includes a nitride semiconductor layer, a first insulating film partly disposed on the upper surface of the nitride semiconductor layer, and a gate electrode provided to have a lower surface that is at least partly in contact with the upper surface of the nitride semiconductor layer that is exposed without being covered with the first insulating film. The first insulating film is provided to be in contact with a side surface of the gate electrode. The first insulating film contains a transition metal.
Claims2
A method for manufacturing a semiconductor device, comprising:
- epitaxial-growing a nitride semiconductor layer on a semiconductor substrate;
- partly forming a first insulating film on an upper surface of the nitride semiconductor layer;
- forming a gate electrode in such a manner that a lower surface of the gate electrode is at least partly in contact with the upper surface of the nitride semiconductor layer that is exposed without being covered with the first insulating film, and in such a manner that a side surface of the gate electrode is in contact with the first insulating film, and the first insulating film including a portion that extends over the nitride semiconductor layer without the gate electrode overlapping an upper surface thereof;
- adding a transition metal to the first insulating film;
- and
- adding the transition metal to the first insulating film including the portion that extends over the nitride semiconductor layer after forming the gate electrode.
A method for manufacturing a semiconductor device, comprising:
- epitaxial-growing a nitride semiconductor layer on a semiconductor substrate;
- partly forming a first insulating film on an upper surface of the nitride semiconductor layer;
- forming a gate electrode in such a manner that a lower surface of the gate electrode is at least partly in contact with the upper surface of the nitride semiconductor layer that is exposed without being covered with the first insulating film, and in such a manner that a side surface of the gate electrode is in contact with the first insulating film;
- adding a transition metal to the first insulating film;
- and
- adding the transition metal to the first insulating film through application of a solution containing a transition metal and through thermal diffusion.
Dependencies are inferred from the claim text.