# US 12,765,033 B2 · Switching element and semiconductor device > Agents: this data is available as JSON from the patentgrep API and MCP server — see https://patentgrep.com/llms.txt - Number: US 12,765,033 B2 - Document ID: US12765033B2 - Status: Granted - Kind: B2 - Application number: 18/482,597 - Filed: 2023-10-06 - Published: 2024-04-18 - Granted: 2026-10-13 - Earliest claimed: 2022-10-14 - Assignees: Rohm Co., Ltd. - Applicants: Rohm Co., Ltd. - Inventors: Yuya Tamura - Web page: https://patentgrep.com/patent/US12765033B2 ## CPC - H10D 64/256: {for lateral devices wherein the source or drain electrodes are recessed in semiconductor bodies (source or drain electrodes of TFTs H10D30/673)} - H10D 30/4755: {having wide bandgap charge-carrier supplying layers, e.g. modulation doped HEMTs such as n-AlGaAs/GaAs HEMTs} - H10D 62/8503: {Nitride Group III-V materials, e.g. AlN or GaN} - H10D 64/513: {within recesses in the substrate, e.g. trench gates, groove gates or buried gates} - H10D: INORGANIC ELECTRIC SEMICONDUCTOR DEVICES ## Abstract The present disclosure provides a semiconductor element, which is a switching element. The switching element includes an element front surface on which a gate pad, a plurality of drain pads, and a plurality of source pads are disposed. A source area which is the total area of the plurality of source pads, is larger than a drain area, which is the total area of the plurality of drain pads. ## Claims ### Claim 1 A switching element, comprising: an element front surface on which a gate pad, a plurality of drain pads, and a plurality of source pads are formed, wherein a source area which is a total area of the plurality of source pads is greater than a drain area which is a total area of the plurality of drain pads, the plurality of source pads and the plurality of drain pads are alternately arranged in a first direction along the element front surface, at least one of the plurality of source pads or one of the plurality of drain pads includes a specific pad having a recess that is formed in any one corner portion among four corners of the specific pad, the gate pad is arranged in a region formed by the recess and disposed at the corner portion, and an area of the specific pad having the recess is less than an area of each of other pads among the plurality of source pads or the plurality of drain pads to which the specific pad belongs. ### Claim 2 (depends on 1) The switching element of claim 1, wherein, when viewing from a direction perpendicular to the element front surface, each of the plurality of source pads, excluding the specific pad, and the plurality of drain pads, excluding the specific pad, has a rectangular shape with a width direction as the first direction and a length direction as a second direction along the element front surface and orthogonal to the first direction. ### Claim 3 (depends on 1) The switching element of claim 1, wherein the specific pad includes an end pad disposed near a first end of the element front surface in the first direction, the end pad includes the recess formed in a corner portion located close to the first end. ### Claim 4 (depends on 1) The switching element of claim 1, wherein the specific pad includes an end pad disposed near a first end of the element front surface in the first direction, and a distance between the first end of the element front surface on which the end pad is disposed and the end pad in the first direction is less than a width of each of the plurality of source pads and the plurality of drain pads. ### Claim 5 (depends on 1) The switching element of claim 1, wherein the switching element is a GaN HEMT. ### Claim 6 (depends on 1) The switching element of claim 1, wherein a ratio of the source area to the drain area is between 5/3 and 2. ### Claim 7 (depends on 6) A semiconductor device, comprising: the switching element of claim 6; a sealing resin sealing the switching element; and a gate terminal, a source terminal and a drain terminal exposed from the sealing resin. ### Claim 8 (depends on 1) The switching element of claim 1, wherein the specific pad is at least one of a first source pad among the plurality of source pads and a first drain pad adjacent to the first source pad in the first direction. ### Claim 9 (depends on 8) The switching element of claim 8, wherein the specific pad includes both the first source pad and the first drain pad, the first source pad includes a first recess, the first drain pad includes a second recess, and the gate pad is arranged in a region formed by both the first recess of the first source pad and the second recess of the first drain pad. ### Claim 10 (depends on 1) A semiconductor device, comprising: the switching element of claim 1; a sealing resin sealing the switching element; and a gate terminal, a source terminal and a drain terminal exposed from the sealing resin. ### Claim 11 (depends on 10) The semiconductor device of claim 10, further comprising: a gate wiring connecting the gate pad and the gate terminal; a source wiring connecting the plurality of source pads and the source terminal; and a drain wiring connecting the plurality of drain pads and the drain terminal, wherein a connection area of the source wiring is greater than a connection area of the drain wiring. ### Claim 12 (depends on 1) The switching element of claim 1, wherein an area of each of the plurality of source pads is greater than an area of each of the plurality of drain pads. ### Claim 13 (depends on 12) The switching element of claim 12, wherein in the first direction, a width of the plurality of source pads, excluding the specific pad, is greater than a width of the plurality of drain pads, excluding the specific pad. ### Claim 14 (depends on 12) The switching element of claim 12, wherein the plurality of source pads, excluding the specific pad, are formed to have same size, and the plurality of drain pads, excluding the specific pad, are formed to have same size. ### Claim 15 (depends on 14) The switching element of claim 14, wherein a width of the plurality of source pads, excluding the specific pad, and a width of the plurality of drain pads are same, and a number of the plurality of source pads, excluding the specific pad, is greater than a number of the plurality of drain pads.