Double-sided Janus transition metal dichalcogenide CMOS device and manufacturing method thereof
AssigneesTaiwan Semiconductor Manufacturing Company, Ltd., National Taiwan University
InventorsYuh-Renn Wu, Yun-Ping Chiu, Hsin-Wen Huang, Hsiu-Chi Pai
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Abstract
An integrated circuit device includes a Janus transition metal dichalcogenide layer, a first gate structure, and a second gate structure. The Janus transition metal dichalcogenide layer has opposite first and second sides. The first gate structure is on the first side of the Janus transition metal dichalcogenide layer. A second gate structure is on the second side of the Janus transition metal dichalcogenide layer.
Claims20
An integrated circuit device, comprising:
- a first substrate and a second substrate;
- a Janus transition metal dichalcogenide layer having opposite first and second sides, wherein the Janus transition metal dichalcogenide layer is disposed between the first substrate and the second substrate;
- a first gate structure disposed on the first substrate and on the first side of the Janus transition metal dichalcogenide layer;
- a second gate structure disposed on the second substrate and on the second side of the Janus transition metal dichalcogenide layer;
- two first contacts disposed on the first substrate and in contact with the first side of the Janus transition metal dichalcogenide layer;
- and
- two second contacts disposed on the second substrate and in contact with the second side of the Janus transition metal dichalcogenide layer.
A method for fabricating an integrated circuit device, comprising:
- forming two first contacts over a first substrate;
- forming two second contacts over a second substrate;
- and
- placing a Janus transition metal dichalcogenide layer between the first and second substrates, such that the first contacts are in contact with a first side of the Janus transition metal dichalcogenide layer, and the second contacts are in contact with a second side of the Janus transition metal dichalcogenide layer.
A method for fabricating an integrated circuit device, comprising:
- forming a first gate structure over a first substrate;
- forming a second gate structure over a second substrate;
- and
- placing a Janus transition metal dichalcogenide layer between the first and second substrates, such that the first gate structure is in contact with a first side of the Janus transition metal dichalcogenide layer and the second gate structure is in contact with a second side of the Janus transition metal dichalcogenide layer.
Dependencies are inferred from the claim text.