# US 12,765,022 B2 · Transistor and manufacturing method thereof

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- Number: US 12,765,022 B2
- Document ID: US12765022B2
- Status: Granted
- Kind: B2
- Application number: 17/944,888
- Filed: 2022-09-14
- Published: 2023-05-04
- Granted: 2026-10-13
- Earliest claimed: 2021-11-02
- Assignees: Samsung Display Co., Ltd.; Yonsei University, University—Industry Foundation (Uif)
- Applicants: Samsung Display Co., LTD.; Yonsei University, University-Industry Foundation (Uif)
- Inventors: Hyung Jun Kim; Hyungjun Kim; Jun Hyung Lim; Hwi Yoon; Seung-min Chung
- Web page: https://patentgrep.com/patent/US12765022B2

## CPC

- H10D 62/80: characterised by the materials
- H10D 64/01: Manufacture or treatment
- H10D: INORGANIC ELECTRIC SEMICONDUCTOR DEVICES

## Abstract

A transistor includes a semiconductor layer on a substrate, a gate electrode overlapping the semiconductor layer, and a source electrode and a drain electrode electrically connected to the semiconductor layer. The semiconductor layer includes a second material doped to a first material. The first material includes a compound expressed as XYa of a Chemical Formula. X is one of Mo, W, Zr, or Re, Y is one of S, Se, or Te, and a is a natural number that is equal to or greater than 1. The second material includes at least one of W, Hf, Ta, Ti, Pt, Ni, Ga, or Zr. The second material includes an element that is different from the first material.

## Claims

### Claim 1

A transistor comprising:
a semiconductor layer on a substrate;
a gate electrode overlapping the semiconductor layer; and
a source electrode and a drain electrode electrically connected to the semiconductor layer,
wherein the semiconductor layer comprises a second material doped to a first material,
wherein the first material comprises a compound expressed as XYa of a Chemical Formula,
wherein the second material is substitutionally doped at the X site of the first material expressed as XYa of the Chemical Formula,
wherein X is one of molybdenum (Mo), tungsten (W), zirconium (Zr), or rhenium (Re), Y is one of sulfur (S), selenium (Se), or tellurium (Te), and a is a natural number that is equal to or greater than 1,
wherein the second material comprises at least one of tungsten (W), hafnium (Hf), tantalum (Ta), titanium (Ti), platinum (Pt), nickel (Ni), gallium (Ga), or zirconium (Zr), and
wherein the second material comprises an element that is different from the first material, and 5.0 wt % to 7.5 wt % of the second material is included with respect to an entire content of the semiconductor layer.

### Claim 2 (depends on 1)

The transistor of claim 1, wherein the semiconductor layer comprises a semiconductor material with a layered structure.

### Claim 3 (depends on 1)

The transistor of claim 1, wherein a thickness of the semiconductor layer is equal to or less than 1.5 nm.

### Claim 4 (depends on 1)

The transistor of claim 1, wherein a threshold voltage of the transistor has a positive value.

### Claim 5 (depends on 4)

The transistor of claim 4, wherein the threshold voltage is positively shifted as a content of the second material increases within the range of 5.0 wt % to 7.5 wt %.

### Claim 6

A method for manufacturing a transistor, the method comprising:
forming a semiconductor layer on a substrate;
forming a gate electrode overlapping the semiconductor layer; and
forming a source electrode and a drain electrode electrically connected to the semiconductor layer,
wherein the forming the semiconductor layer comprises inputting a first precursor, a second precursor, and a reactant into a chamber to form a semiconductor material,
wherein the semiconductor material comprises a second material doped to a first material,
wherein the first material comprises a compound expressed as XYa of a Chemical Formula,
wherein X is one of molybdenum (Mo), tungsten (W), zirconium (Zr), or rhenium (Re),
wherein Y is one of sulfur (S), selenium (Se), or tellurium (Te),
wherein a is a natural number that is equal to or greater than 1,
wherein the second material comprises at least one of tungsten (W), hafnium (Hf), tantalum (Ta), titanium (Ti), platinum (Pt), nickel (Ni), gallium (Ga), or zirconium (Zr),
wherein the second material is substitutionally doped at the X site of the first material expressed as XYa of the Chemical Formula, and
wherein the second material comprises an element that is different from the first material, and 5.0 wt % to 7.5 wt % of the second material is included with respect to an entire content of the semiconductor layer.

### Claim 7 (depends on 6)

The method of claim 6, wherein the forming the semiconductor layer comprises injecting an inert gas, and
wherein a doping content of the second material is controlled according to an injecting speed of the inert gas.

### Claim 8 (depends on 6)

The method of claim 6, wherein the semiconductor material is formed to have a layered structure.

### Claim 9 (depends on 6)

The method of claim 6, wherein the semiconductor layer is formed to have a thickness of equal to or less than 1.5 nm.

### Claim 10 (depends on 6)

The method of claim 6, wherein a threshold voltage of the transistor has a positive value.

### Claim 11 (depends on 6)

The method of claim 6, wherein a threshold voltage is positively shifted as a content of the second material increases within a range of 5.0 wt % to 7.5 wt %.