Silicon carbide semiconductor device
AssigneeFuji Electric Co., Ltd.
InventorNaoyuki Ohse
Life of this patent
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Abstract
A silicon carbide semiconductor device includes: a drift layer of a first conductivity-type; a base region of a second conductivity-type provided on a top surface side of the drift layer; a source contact region of the first conductivity-type including silicon carbide having a 3C-structure provided on a top surface side of the base region; a gate electrode buried inside a trench with a gate insulating film interposed; a base contact region of the second conductivity-type including silicon carbide having a 4H-structure provided on the top surface side of the drift layer; a semiconductor region including silicon carbide having a 4H-structure provided between the source contact region and the base contact region; and a main electrode provided to be in contact with the source contact region.
Claims20
A silicon carbide semiconductor device comprising:
- a drift layer of a first conductivity-type including silicon carbide;
- a base region of a second conductivity-type including silicon carbide provided on a top surface side of the drift layer;
- a source contact region of the first conductivity-type including silicon carbide having a 3C-structure provided on a top surface side of the base region;
- a gate insulating film provided inside a trench penetrating the source contact region and the base region;
- a gate electrode buried inside the trench with the gate insulating film interposed;
- a base contact region of the second conductivity-type including silicon carbide having a 4H-structure provided on the top surface side of the drift layer and having a higher impurity concentration than the base region;
- a semiconductor region including silicon carbide having a 4H-structure provided between the source contact region and the base contact region;
- and
- a main electrode provided to be in contact with the source contact region.
Dependencies are inferred from the claim text.