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US 12,765,019 B2Granted
Laminated structure, semiconductor device and method for manufacturing laminated structure
AssigneeShin-Etsu Chemical Co., Ltd.
InventorsTakenori Watabe, Hiroshi Hashigami, Takahiro Sakatsume
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Abstract
A laminated structure including, a ground substrate with a crystalline oxide film containing gallium oxide as a main component and a root-mean-square of a roughness on a surface of the crystalline oxide film is 0.2 μm or less. A diameter of the ground substrate is 50 mm or more and TTV of the ground substrate is 30 μm or less.
Claims17
A laminated structure comprising:
- a ground substrate;
- and
- a crystalline oxide film containing gallium oxide as a main component, wherein
- a root-mean-square of a roughness on a surface of the crystalline oxide film is 0.2 μm or less;
- a diameter of the ground substrate is 50 mm or more;
- and
- TTV of the ground substrate is 30 μm or less.
4 more elements
A method for manufacturing a laminated structure comprising the steps of:
- generating mist by mist-forming from a raw material solution containing gallium at a mist-forming unit;
- supplying a carrier gas for transporting the mist to the mist-forming unit;
- transporting the mist by the carrier gas from the mist-forming unit to a film-forming chamber, in which a ground substrate is mounted, via a supply pipe connecting the mist-forming unit and the film-forming chamber;
- and
- forming a film on the ground substrate with the transported mist by heat treatment, wherein
- a diameter of the ground substrate is 50 mm or more and TVV is 30 μm or less.
3 more elements
Dependencies are inferred from the claim text.