Semiconductor devices with nanostructures arranged end-to-end

A semiconductor device, comprising:

• a first CMOS device, comprising:
• a first nanostructure extending lengthwise along a first direction, wherein the first nanostructure is a first type and has a first width along a second direction different than the first direction;
• a second nanostructure adjacent a first side of the first nanostructure along the second direction, wherein the second nanostructure is a second type and has a second width along the second direction that is less than the first width;
• a third nanostructure adjacent a second side of the first nanostructure along the second direction, wherein the third nanostructure is the second type and has the second width, and the first side and the second side face in opposite directions;
• and
• a first gate structure extending over and surrounding the first nanostructure, the second nanostructure, and the third nanostructure;
• a second CMOS device adjacent the first CMOS device, the second CMOS device comprising:
• a fourth nanostructure extending lengthwise along the first direction, being adjacent the second nanostructure along the first direction, and having a third width along the second direction that is less than the second width;
• and
• a second gate structure extending over and surrounding the fourth nanostructure;
• a plurality of isolation structures separating the first gate structure from the second gate structure;
• and
• a gate end isolation region physically contacting a first sidewall of the first gate structure and a second sidewall of the second gate structure, wherein the gate end isolation region is adjacent the second nanostructure and the fourth nanostructure, wherein a first distance from the second nanostructure to the gate end isolation region is greater than a second distance from the fourth nanostructure to the gate end isolation region, and the first sidewall and the second sidewall face in a same direction.

A device comprising:

• a fin extending lengthwise in a first direction, protruding from a substrate along a second direction different than the first direction, and comprising:
• a first portion extending lengthwise in the first direction and having a first width along a third direction different than the first direction and the second direction;
• and
• a second portion extending lengthwise in the first direction and having a second width along the third direction that exceeds the first width, wherein the first portion and the second portion are arranged end-to-end along the first direction;
• a first nanostructure on the first portion of the fin;
• a second nanostructure on the second portion of the fin;
• a first isolation structure extending in the second direction, the first isolation structure separating the first portion of the fin from the second portion of the fin along the first direction;
• a first gate stack on the first nanostructure;
• a second gate stack on the second nanostructure;
• and
• a second isolation structure extending lengthwise along the first direction and comprising:
• a first region in the first gate stack;
• and
• a second region in the second gate stack;
• wherein a first sidewall of the first region is separated from the first portion of the fin by a first distance, and a second sidewall of the second region is separated from the second portion of the fin by a second distance, wherein the second distance exceeds the first distance and the first sidewall and the second sidewall face in a same direction.